Abstract:Silicon-based semiconductor quantum dot quantum computing coding with spin is compatible with traditional microelectronic processes, easy to expand, and can be isotope purified to improve the decoherence time, so it has attracted much attention. There are fewer reports on the work related to undoped Si/SiGe heterostructures grown by molecular beam epitaxy compared with chemical vapor deposition. An undoped Si/SiGe heterostructure has been grown by molecular beam epitaxy. The scanning transmission electron microscopy and energy-dispersive spectroscopy mapping results show an atomic-scale interface with a characteristic length of 0.53 nm. The surface root-mean-square roughness measured by atomic force microscope is 0.44 nm. The X-ray diffraction data show that the Si quantum well is fully strained and the in-plane strain is 1.03%. In addition, the performance of the two-dimensional electron gas was evaluated by low-temperature Hall measurements, which were conducted in the Hall-bar shaped field-effect transistor. It shows a peak mobility of 20.21×10 4 cm 2 ·V -1 ·s -1 when the carrier density is about 6.265×1011 cm-2 at 250 mK. The percolation density is 1.465×10 11 cm -2 . The effective mass of the two-dimensional electron gas is approximately 0.19 m 0 . The power exponential relationship (1.026) between carrier density and mobility at different gate voltages, along with the Dingle ratio (7-12) of the two-dimensional electron gas, indicates that the electrons are scattered by background impurities and semiconductor/oxide interfaces charges. The atomically sharp interface of Si/SiGe heterostructures created by molecular beam epitaxy is beneficial for researching the valley physics properties in silicon. The structural and transport characterizations in this paper lay the foundation for the optimization of Si-based semiconductor quantum dot quantum computing materials.

Sige Quantum Dot Molecules Grown on Patterned Si (001) Substrates

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Factors Influencing Epitaxial Growth of Three-Dimensional Ge Quantum Dot Crystals on Pit-Patterned Si Substrate.

Ordering of low-density Ge quantum dot on patterned Si substrate

Epitaxy and characterization of undoped Si/SiGe heterojunctions

Optical properties of Ge/Si quantum dot superlattices

Interface Interdiffusion Intensified by Formation of Quantum Dots

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Study of Si and Ge growth on Si(100) surface

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence