Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

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Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Mineral Interface Doping: Hydroxyapatite Deposited on Silicon to Trigger the Electronic Properties

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

Comparison on Mechanical Properties of Heavily Phosphorus- and Arsenic-Doped Czochralski Silicon Wafers

Phosphorus Diffusion Gettering of Substitutional Metal Contaminants at A Small-Angle Grain Boundary in N-Type Silicon: the Case of Gold

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Diffusion of Phosphorus in silicon dioxide from a spin-on source

Effects of Heavy Phosphorus-Doping on Mechanical Properties of Czochralski Silicon

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Phosphorus doping of ultra-small silicon nanocrystals

Doping silicon nanocrystals with boron and phosphorus

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory