Abstract:Doping silicon wafers without using highly toxic or corrosive chemical substances is a critical issue for semiconductor device manufacturing. Peter Thissen and Roberto C. Longo investigate thin mineral layers of hydroxyapatite as a doping basis. Measurements show that the phosphorus is transported through the silicon oxide barrier, then diffuses inside the oxide‐free silicon and finally changes the electrical activity. Doping silicon wafers without using highly toxic or corrosive chemical substances has become a critical issue for semiconductor device manufacturing. In this work, ultra‐thin films of hydroxyapatite (Ca5(PO4)3OH) are prepared by tethering by aggregation and growth (T‐BAG), and further processed by spike annealing. Via in situ infrared (IR), the decomposition of hydroxyapatite and intermixing with the native silicon oxide is observed already at temperatures as low as 200 °C. Phosphate transport through the native silicon oxide is driven by a phase transformation into a more stable thermal oxide. At 700 °C, diffusion of phosphorus into the sub‐surface region of oxide‐free silicon is observed. In situ IR combined with electrical impedance spectroscopy (EIS), time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS), and X‐ray photoelectron spectroscopy (XPS) measurements allows to conclude that the phosphorus is: i) transported through the silicon oxide barrier, ii)) diffused inside the oxide‐free silicon, and iii) finally modified the electrical activity of the silicon wafer. To further explain the experimental findings, density‐functional theory (DFT) is used to demonstrate the extent of the effect of phosphorus doping on the electronic nature of silicon surfaces, showing that even small amounts of doping can have a measurable effect on the electrical performance of semiconductor wafers.

Diffusion of Phosphorus in silicon dioxide from a spin-on source

Diffusion Mechanism of Phosphorus from Phosphorous Vapor in Amorphous Silicon Dioxide Film Prepared by Thermal Oxidation

Silicon dioxide masking of phosphorus diffusion in silicon

A comprehensive model of high-concentration phosphorus diffusion in silicon

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

Engineering of the spin on dopant process on silicon on insulator substrate

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes

Radiation-enhanced diffusion of impurity atoms in silicon layers

Effect of Phosphorus Doping on the Performance of Au/Si Inter-Diffusion

Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide

Phosphorus Diffusion in Silicon Oxide and Oxynitride Gate Dielectrics

Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Mineral Interface Doping: Hydroxyapatite Deposited on Silicon to Trigger the Electronic Properties

Removal of Alkaline Impurities in a Polysilicon Gate Structure by Phosphorus Diffusion

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Phosphorus emitter profile control for silicon solar cell using the doss diffusion technique

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals