Silicon dioxide masking of phosphorus diffusion in silicon

R.N. Ghoshtagore
DOI: https://doi.org/10.1016/0038-1101(75)90041-6
1975-05-01
Abstract:Doped oxide diffusion condition was used to diffuse P-32 radioisotope into 1100°C thermal SiO2. Two phosphorus containing diffusing species were identified. Their diffusion characteristics were used with the literature data on the kinetics of phosphosilicate glass formation to construct a multiple-zone model of P2O5 diffusion into thermal SiO2. This physical model was quantitatively verified by several types of masking experiments. In addition, the effects of dry-wet and dry-wet-dry oxidations (at 1100 and 1200°C) on the masking capability of the thermal oxides were examined.
physics, condensed matter, applied,engineering, electrical & electronic
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