Abstract:Doping silicon wafers without using highly toxic or corrosive chemical substances is a critical issue for semiconductor device manufacturing. Peter Thissen and Roberto C. Longo investigate thin mineral layers of hydroxyapatite as a doping basis. Measurements show that the phosphorus is transported through the silicon oxide barrier, then diffuses inside the oxide‐free silicon and finally changes the electrical activity. Doping silicon wafers without using highly toxic or corrosive chemical substances has become a critical issue for semiconductor device manufacturing. In this work, ultra‐thin films of hydroxyapatite (Ca5(PO4)3OH) are prepared by tethering by aggregation and growth (T‐BAG), and further processed by spike annealing. Via in situ infrared (IR), the decomposition of hydroxyapatite and intermixing with the native silicon oxide is observed already at temperatures as low as 200 °C. Phosphate transport through the native silicon oxide is driven by a phase transformation into a more stable thermal oxide. At 700 °C, diffusion of phosphorus into the sub‐surface region of oxide‐free silicon is observed. In situ IR combined with electrical impedance spectroscopy (EIS), time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS), and X‐ray photoelectron spectroscopy (XPS) measurements allows to conclude that the phosphorus is: i) transported through the silicon oxide barrier, ii)) diffused inside the oxide‐free silicon, and iii) finally modified the electrical activity of the silicon wafer. To further explain the experimental findings, density‐functional theory (DFT) is used to demonstrate the extent of the effect of phosphorus doping on the electronic nature of silicon surfaces, showing that even small amounts of doping can have a measurable effect on the electrical performance of semiconductor wafers.

Removal of Alkaline Impurities in a Polysilicon Gate Structure by Phosphorus Diffusion

Phosphorus Diffusion in Silicon Oxide and Oxynitride Gate Dielectrics

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Influence of Phosphorus Diffusion on the SiO2/4H-SiC (0001) Interface During Poly Gate Formation Process

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

Diffusion of Phosphorus in silicon dioxide from a spin-on source

Improving the reliability of MOS capacitor on 4H-SiC (0001) with phosphorus diffused polysilicon gate

Doping silicon nanocrystals with boron and phosphorus

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Deep Level Transient Spectroscopic Investigation of Phosphorus-Doped Silicon by Self-Assembled Molecular Monolayers

Using CoSi2 /polysilicon Polycide Structure As a Gate Diffusion Source in Rapid Thermal Processing

Mineral Interface Doping: Hydroxyapatite Deposited on Silicon to Trigger the Electronic Properties

A 3‐in‐1 doping process for interdigitated back contact solar cells exploiting the understanding of co‐diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

In Situ Doped Phosphorus Diffusion Behavior in Germanium Epilayer on Silicon Substrate by Ultra-High Vacuum Chemical Vapor Deposition

In-situ phosphorous-doped VLPCVD polysilicon layers for polysilicon thin-film transistors

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer