Abstract:The effects of carbon in heavily phosphorus-doped Czochralski (HP-Cz) silicon (Si) substrates, with the concentrations across an order of magnitude from 1016 to 1017 cm−3, on the out-diffusion of phosphorus impurities within n/n+ epitaxial Si (Epi-Si) wafers have been investigated. It is found that the increase in the carbon concentration ([C]) from 1.0 × 1016 to 1.0 × 1017 cm−3 leads to the enhanced phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1100 °C in an N2 or an O2 ambient or to anneal at 1150 °C in an N2 ambient, but hardly affects the phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1150 °C in an O2 ambient. Based on the density functional theory calculations, it is derived that the increase in the [C] from 1.0 × 1016 to 1.0 × 1017 cm−3 in the HP-Cz Si substrate results in a significantly increased thermal equilibrium concentration of self-interstitial silicon (SiI) atoms at 1100 or 1150 °C, which, in turn, leads to the increased concentration of the SiI atoms that out-diffuse from the substrate to the epitaxial layer because the SiI atoms diffuse extremely fast in Si. Such a carbon-induced increase in the concentration of SiI atoms is believed to be responsible for the aforementioned enhanced phosphorus out-diffusion, which is predominantly dictated by the interstitialcy mechanism. In the case of anneal in the O2 ambient at sufficiently high temperatures such as 1150 °C, a large number of excessive SiI atoms injected into the Epi-Si wafer substantially mask the carbon enhancement effect on the phosphorus out-diffusion. Of technological significance, it is deduced that the [C] should be not higher than 1.0 × 1016 cm−3 in the HP-Cz Si wafers as the substrates of n/n+ Epi-Si wafers used for power devices.

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Removal of Alkaline Impurities in a Polysilicon Gate Structure by Phosphorus Diffusion

Influence of Phosphorus Diffusion on the SiO2/4H-SiC (0001) Interface During Poly Gate Formation Process

Diffusion of Phosphorus in silicon dioxide from a spin-on source

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Radiation-enhanced diffusion of impurity atoms in silicon layers

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

A comprehensive model of high-concentration phosphorus diffusion in silicon

Fluorine in Silicon: Diffusion, Trapping, and Precipitation

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Diffusion Mechanism of Phosphorus from Phosphorous Vapor in Amorphous Silicon Dioxide Film Prepared by Thermal Oxidation

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Retarded Oxygen Diffusion in Heavily Phosphorus-Doped Czochralski Silicon: Experiments and First-Principles Calculations

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

Silicon dioxide masking of phosphorus diffusion in silicon

ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface