Abstract:A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possibility of studying the electrostatic properties of a p-n junction with nm-scale spatial resolution. The complete description of a p-n junction must take into account the precise evolution of the concentration of dopants around the junction, since the sharpness of the dopant transition directly influences the built-in potential and the maximum electric field. Here, a contacted silicon p-n junction is studied through in-situ biased 4D-STEM. Measurements of electric field, built-in voltage, depletion region width and charge density in the space charge region are combined with analytical equations as well as finite-element simulations in order to evaluate the quality of the junction interface. The nominally-symmetric, highly doped ($N_A = N_D = 9\space x \space10^{18} cm^{-3}$) junction presents an electric field and built-in voltage much lower than expected for an abrupt junction. These experimental results are consistent with electron holography data. All measured junction parameters are compatible with the presence of an intermediate region with a graded profile of the dopants at the p-n interface. This hypothesis is also consistent with the evolution of the electric field with bias. These results demonstrate that in-situ biased 4D-STEM enables a better understanding of the electrical properties of semiconductor p-n junctions with nm-scale resolution.

Electrochemical Capacitance-Voltage Characterization of Plasma-Doped Ultra-Shallow Junctions

ECV profiling of ultra-shallow junction formed by plasma doping

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Differential Hall Profiling of Ultra-Shallow Junctions Formed by Plasma Doping and Ion Implantation

pn-junction delineation in Si devices using scanning capacitance spectroscopy

Carrier depth profile of Si/SiGe/Si n-p-n HBT structural materials characterized by electrochemical capacitance-voltage method

C-V Profiling of Ultra-Shallow Junctions Using a Buried Layer with Stepped Doping

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

High-frequency Capacitance–voltage Measurement of Plasma-Enhanced Chemical-Vapor-deposition-grown SiO2/n-GaN Metal-Insulator-semiconductor Structures

Simulation on Plasma Doping for Shallow Junction Formation

Characterizations on the Doping of Single-Crystal Silicon Carbide

Capacitance-voltage (C-V) Characterization in Very Thin Suspended Silicon Nanowires for NEMS-CMOS Integration in 160nm Silicon-on-Insulator (SOI)

Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM

A New Plasma Aided Solid-Source Implantation Method for Ultra-Shallow P/sup +//n Junction Fabrication

Capacitance Transient and Current-/Capacitance-voltage Study of Direct Silicon Bonded (110)∕(100) Interface

Probing the dopant profile in nanoscale devices by low temperature electrostatic force microscopy

Simulation on Boron Concentration Profile in Silicon Introduced by Plasma Doping

Fabrication of Ultra-Shallow Junction by in Situ Doped Amorphous Silicon Films and Its Application in Silicon Drift Detectors

Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy