Abstract:The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junction. Although many experiments have demonstrated the working principle, there is a lack of fundamental understanding of its basic properties and expected performances, in particular when the device is driven out-of-equilibrium. To fill the current gap in understanding, we investigate the electrostatics and electronic transport of 2D lateral pn junctions. To do so we implement a physics-based simulator that self-consistently solves the 2D Poisson's equation coupled to the drift-diffusion and continuity equations. Notably, the simulator takes into account the strong influence of the out-of-plane electric field through the surrounding dielectric, capturing the weak screening of charge carriers. Supported by simulations, we propose a Shockley-like equation for the ideal current-voltage (J-V) characteristics, in full analogy to the bulk junction after defining an effective depletion layer (EDL). We also discuss the impact of recombination-generation processes inside the EDL, which actually produce a significant deviation with respect to the ideal behavior, consistently with experimental data. Moreover, we analyze the capacitances and conductance of the 2D lateral pn junction. Based on its equivalent circuit we investigate its cut-off frequency targeting RF applications. To gain deeper insight into the role played by material dimensionality, we benchmark the performances of single-layer MoS2 (2D) lateral pn junctions against those of the Si (3D) junction. Finally, a practical discussion on the short length 2D junction case together with the expected impact of interface states has been provided. Given the available list of 2D materials, this work opens the door to a wider exploration of material-dependent performances.

Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM

Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves).

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

A Comparative Study of N+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors

pn-junction delineation in Si devices using scanning capacitance spectroscopy

Dynamic Visualization of Axial P-N Junctions in Single Gallium Nitride Nanorods under Electrical Bias.

C-V Profiling of Ultra-Shallow Junctions Using a Buried Layer with Stepped Doping

Photocurrent Imaging of p-n Junctions and Local Defects in Ambipolar Carbon Nanotube Transistors

Differential phase contrast (DPC) mapping electric fields: Optimising experimental conditions

In Situ Fabrication and Optoelectronic Analysis of Axial CdS/p-Si Nanowire Heterojunctions in a High-Resolution Transmission Electron Microscope

Formation of Silicon Ultra Shallow Junction by Nonmelt Excimer Laser Treatment

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

Subnanometer-resolution Depth Profiling of Boron Atoms and Lattice Defects in Silicon Ultrashallow Junctions by Ion Beam Techniques

Exploring transport mechanisms in an atomic precision advanced manufacturing (APAM) enabled pn junctions

Abrupt degenerately-doped silicon nanowire tunnel junctions

2D pn junctions driven out-of-equilibrium

Understanding and optimizing EBIC pn-junction characterization from modeling insights

Junction Control by Carbon and Phosphorus Co-Implantation in Pre-Amorphized Germanium