Abstract:To assist the design of novel, highly efficient molecular junctions, a deep understanding of the precise charge transport mechanisms through these devices is of prime importance. In the present contribution, we describe a procedure to investigate spatially-resolved electron transport through a nanojunction from first principles, at the example of a nitro-substituted oligo-(phenylene ethynylene) covalently bound to graphene nanoribbon leads. Recently, we demonstrated that the conductivity of this single-molecule-graphene-nanoribbon junction can be switched quantitatively and reversibly upon application of a static electric field in a top gate position, in the spirit of a traditional field effect transistor [J. Phys. Chem. C, 2016, 120, 28808-28819]. The propensity of the central oligomer unit to align with the external field was found to induce a damped rotational motion and to cause an interruption of the conjugated $\pi$-system, thereby drastically reducing the conductance through the nanojunction. In the current work, we use the driven Liouville-von-Neumann (DLvN) approach for time-dependent electronic transport calculations to simulate the electronic current dynamics under time-dependent potential biases for the two logical states of the nanojunction. Our quantum dynamical simulations rely on a novel localization procedure using an orthonormal set of molecular orbitals obtained from a standard density functional theory calculation to generate a localized representation for the different parts of the molecular junction. The transparent DLvN formalism allows us to directly access the density matrix and to reconstruct the time-dependent electronic current density, unraveling unique mechanistic details of the electron transport.

Dynamic Visualization of Axial P-N Junctions in Single Gallium Nitride Nanorods under Electrical Bias.

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM

Nanoscale Impact Ionization and Electroluminescence in a Biased Scanning-Tunneling-Microscope Junction

Distant Entanglement of Macroscopic Gas Samples

Analysis of Nanowire pn-Junction with Combined Current–Voltage, Electron-Beam-Induced Current, Cathodoluminescence, and Electron Holography Characterization

In-situ potential mapping of space charge layer in GaN nanowires under electrical field by off-axis electron holography

Spin-Resolved Electronic and Transport Properties of Graphyne-Based Nanojunctions with Different N-Substituting Positions.

Photocurrent Imaging of p-n Junctions and Local Defects in Ambipolar Carbon Nanotube Transistors

Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM

Correlation of Doping, Structure, and Carrier Dynamics in a Single GaN Nanorod

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

Visualization of carrier depletion in semiconducting nanowires.

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

Fabrication and Electrical Properties of Axial and Radial GaAs Nanowire Pn Junction Diode Arrays

Abrupt degenerately-doped silicon nanowire tunnel junctions

Electronic Flux Density Maps Reveal Unique Current Patterns in a Single-Molecule-Graphene-Nanoribbon Junction

Electroluminescence from single nanowires by tunnel injection: an experimental study

Direct Injection Tunnel Spectroscopy of a P-N Junction

First-principles study of electric field effect and spin-polarization transport properties of zigzag α-2 graphyne nanoribbons