Abstract:One-dimensional semiconductor nanowires hold the promise for various optoelectronic applications since they combine the advantages of quantized in-plane energy levels (as in zero-dimensional quantum dots) with a continuous energy spectrum along the growth direction (as in three-dimensional bulk materials). This dual characteristic is reflected in the density of states (DOS), which is thus the key quantity describing the electronic structures of nanowires, central to the analysis of electronic transport and spectroscopy. By comparing the DOS derived from the widely used standard model, the effective mass approximation (EMA) in single parabolic band mode, with that from direct atomistic pseudopotential theory calculations for GaAs and InAs nanowires, we uncover significant qualitative and quantitative shortcomings of the standard description. In the EMA description the nanowire DOS is rendered as a series of sharply rising peaks having slowly decaying tails, with characteristic peak height and spacing, all being classifiable in the language of atomic orbital momenta 1S, 1P, 1D, etc. Herein we find in the thinner nanowires that the picture changes significantly in that not only does the profile of each DOS peak lose its pronounced asymmetry, with significant changes in peak width, height, and spacing, but also the origin of the high-energy peaks changes fundamentally: below some critical diameter, the region of atomic orbital momentum classified states is occupied by a new set of DOS peaks folded-in from other non-G-valleys. We describe explicitly how distinct physical effects beyond the conventional EMA model contribute to these realistic DOS features. These results represent a significant step toward understanding the intriguing electronic structure of nanowires reflecting the coexistence of discrete and continuum states. Experimental examinations of the predicted novel DOS features are called for.

Visualization of carrier depletion in semiconducting nanowires.

Fringing Field Effects in Semiconductor Nanowire Double Heterostructures

Quantitative Analysis of Current-Voltage Characteristics of Semiconducting Nanowires: Decoupling of Contact Effects

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Current-voltage Characteristics and Parameter Retrieval of Semiconducting Nanowires

Charge Separation and Dissipation in Molecular Wires under a Light Radiation

Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors

Electrothermal Dynamics of Semiconductor Nanowires under Local Carrier Modulation.

Ultrafast carriers' separation imaging in WS2-WSe2 in plane heterojunction by transient reflectivity microscopy

Hot-Carrier Separation in Heterostructure Nanowires observed by Electron-Beam Induced Current

Reinterpretation Of The Expected Electronic Density Of States Of Semiconductor Nanowires

Real-Space Visualization of Energy Loss and Carrier Diffusion in A Semiconductor Nanowire Array Using 4d Electron Microscopy

Ultra-long Distance Carrier Transportation in Bandgap-Graded CdSxSe1-x Nanowire Waveguides

Modulation of the carrier mobility enhancement in Si/Ge core-shell nanowires under different interface confinements.

Dynamics of Graded-Composition and Graded-Doping Semiconductor Nanowires under Local Carrier Modulation

Comprehensive Mobility Study of Silicon Nanowire Transistors Using Multi-Subband Models

Dynamic Visualization of Axial P-N Junctions in Single Gallium Nitride Nanorods under Electrical Bias.

Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires

Quantum transport in an ambipolar InSb nanowire quantum dot device

(Invited) Signatures of Charge Carrier (De)Localization in Semiconducting Single-Walled Carbon Nanotubes

Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes