Abstract:Finding a Si-based material with strong optical activity at the band-edge remains a challenge despite decades of research. The interest lies in combining optical and electronic functions on the same wafer, while retaining the extraordinary know-how developed for Si. However, Si is an indirect-gap material. The conservation of crystal momentum mandates that optical activity at the band-edge includes a phonon, on top of an electron-hole pair, and hence photon absorption and emission remain fairly unlikely events requiring optically rather thick samples. A promising avenue to convert Si-based materials to a strong light-absorber/emitter is to combine the effects on the band-structure of both nanostructuring and alloying. The number of possible configurations, however, shows a combinatorial explosion. Furthermore, whereas it is possible to readily identify the configurations that are formally direct in the momentum space (due to band-folding) yet do not have a dipole-allowed transition at threshold, the problem becomes not just calculation of band structure but also calculation of absorption strength. Using a combination of a genetic algorithm and a semiempirical pseudopotential Hamiltonian for describing the electronic structures, we have explored hundreds of thousands of possible coaxial core/multishell Si/Ge nanowires with the orientation of [001], [110], and [111], discovering some "magic sequences" of core followed by specific Si/Ge multishells, which can offer both a direct bandgap and a strong oscillator strength. The search has revealed a few simple design principles: (i) the Ge core is superior to the Si core in producing strong bandgap transition; (ii) [001] and [110] orientations have direct bandgap, whereas the [111] orientation does not; (iii) multishell nanowires can allow for greater optical activity by as much as an order of magnitude over plain nanowires; (iv) the main motif of the winning configurations giving direct allowed transitions involves rather thin Si shell embedded within wide Ge shells. We discuss the physical origin of the enhanced optical activity, as well as the effect of possible experimental structural imperfections on optical activity in our candidate core/multishell nanowires.

Modulation of the carrier mobility enhancement in Si/Ge core-shell nanowires under different interface confinements.

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces

The Atomistic Origin Of Interface Confinement And Enhanced Conversion Efficiency In Si Nanowire Solar Cells

Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation

Tailoring thermal transport and confinement effect ofGaN/Si3N4nanowires utilizing core-shell architecture

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Mixed-ligand-functionalized Silicon-Germanium Alloy Nanocrystals with Improved Carrier Mobilities.

Genomic Design of Strong Direct-Gap Optical Transition in Si/Ge Core/multishell Nanowires.

Thermoelectric Modeling of Si-Si 1-X Ge X Ordered Nanowire Composites

Charged impurity scattering and mobility in gated silicon nanowires

Molecular Dynamics Computation of Thermal Properties in Si/Ge Nanocomposites

Thermal Transport in Crystalline Si/Ge Nano-Composites: Atomistic Simulations and Microscopic Models

Nonlinear Concentration-Dependent Electronic and Optical Properties of Si1–xGex Alloy Nanowires

Reduced Carrier Backscattering in Heterojunction Sige Nanowire Channels

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Strong Surface Orientation Dependent Thermal Transport in Si Nanowires.

Thermal conductivity inhibition in phonon engineered core-shell cross-section modulated Si/Ge nanowires

Surface Morphology and Strain Coupling Effects on Phonon Transport in Silicon Nanowires

Ultralow Thermal Conductivity in Si/GexSi1−x Core-Shell Nanowires

Characterization of carrier transport properties in strained crystalline Si wall-like structures as a function of scaling into the quasi-quantum regime

Enhancement of Electron Mobility in Nanocrystalline Silicon∕crystalline Silicon Heterostructures