Abstract:In order to study the thermal transport characteristics of the heterogeneous gallium nitride/graphene/silicon carbide interface, the effects of temperature, size and vacancy defects on the thermal conductance of the interface were investigated by non-equilibrium molecular dynamics method, and the changes of phonon state density and phonon participation rate on the thermal conductance of the interface were further analysed. The results show that the thermal conductance of the interface increases with increasing temperature. The analysis shows that with the increase of temperature, the lattice vibration intensities, the density of low frequency phonon states and the number of phonons involved in heat transport increase. The change of thermal conductance at the interface of single-layer graphene is higher than that of multi-layer graphene. When the structural size of the heat transport direction is changed, and the number of layers of gallium nitride and silicon carbide is changed at the same time, the thermal conductance at the interface does not change significantly, and the phonon scattering of the thermal transport at the interface is almost unaffected. However, as the number of graphene interlayers increases from the first layer to the fifth layer, the interface thermal conductance first decreases and then slowly increases. Because of the fourth layer, the participation rate of low frequency phonons decreases, more phonons are localised, and the number of phonons not involved in heat transfer increases, the interfacial thermal conductance reaches the minimum value of 0.024GW/m 2 K. As the vacancy defect concentration increases, the interfacial thermal conductance first increases gradually and then decreases.The difference is that when the concentration of single vacancy defects is 10%, the interface thermal conductance reaches the maximum value of 0.063GW/m 2 K. When the concentration of double vacancy defects is 12%, the interfacial thermal conductance reaches the maximum value of 0.065GW/m 2 K. The analysis shows that more phonons enter the delocalisation from the local region and more phonons participate in the heat transfer, leading to the increase of the interface thermal conductance. The results are useful for tuning the thermal transport performance of GaN devices and provide a theoretical basis for the design of devices with heterogeneous interfaces.

Thermal Transport in Si/Ge Nanocomposites

Molecular Dynamics Computation of Thermal Properties in Si/Ge Nanocomposites

Thermal Transport in Crystalline Si/Ge Nano-Composites: Atomistic Simulations and Microscopic Models

Tunable Thermal Conductivity of Si1−xGex Nanowires

The Thermal Conductivity of SiGe Heterostructure Nanowires with Different Cores and Shells

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Thermoelectric Properties of Transverse Transport in Nanowire Array Structures

Phonon Mean Free Path Spectrum and Thermal Conductivity for Si1−xGex Nanowires

Lattice Thermal Conductivity of Si/Ge Composite Thermoelectric Material: Effect of Si Particle Distribution

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces

Thermal Stability of Single Walled SiGe Nanotube with Vacancy Defects: a Molecular Dynamics Simulation Study

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Diameter dependence of SiGe nanowire thermal conductivity

Effects of nano-void density, size, and spatial population on thermal conductivity: a case study of GaN crystal

Heat transport characteristics of gallium nitride/graphene/silicon carbide heterointerface Molecular dynamics studies

Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire

Tailoring thermal transport and confinement effect ofGaN/Si3N4nanowires utilizing core-shell architecture

Si/Ge interfacial thermal conductance enhancement through Sn nanoparticle embedding

Thermal Conductivity of GaAs/Ge Nanostructures

Impact of Ge clustering on the thermal conductivity of SiGe nanowires: atomistic simulation study

Glass‐Like Phonon Dynamics and Thermal Transport in a GeTe Nano‐Composite at Low Temperature