Abstract:Semiconductor nanowires (NWs) are promising candidates for use in electronic and optoelectronic applications, offering numerous advantages over their thin film counterparts. Their performance relies heavily on the quality of the contacts to the NW, which should exhibit ohmic behavior with low resistance and should be formed in a reproducible manner. In the case of heterostructure NWs for high-mobility applications that host a two-dimensional electron gas (2DEG), ohmic contacts are particularly challenging to implement since the NW core constituting the conduction channel is away from the NW surface. We investigated contact formation to modulation-doped GaAs/(Al,Ga)As core/shell NWs using scanning transmission electron microscopy (STEM), energy dispersive X-ray spectroscopy (EDX) and electron tomography (ET) to correlate microstructure, diffusion profile and chemical composition of the NW contact region with the current-voltage (I-V) characteristics of the contacted NWs. Our results illustrate how diffusion, alloying and phase formation processes essential to the effective formation of ohmic contacts are more intricate than in planar layers, leading to reproducibility challenges even when the processing conditions are the same. We demonstrate that the NW geometry plays a crucial role in the creation of good contacts. Both ohmic and rectifying contacts were obtained under nominally identical processing conditions. Furthermore, the presence of Ge in the NW core, in the absence of Au and Ni, was found as the key factor leading to ohmic contacts. The analysis contributes to the current understanding of ohmic contact formation to heterostructure core/shell NWs offering pathways to enhance the reproducibility and further optimization of such NW contacts.

In-situ potential mapping of space charge layer in GaN nanowires under electrical field by off-axis electron holography

Effect of strain on space charge layer in GaN nanowires investigated by in-situ off-axis electron holography

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Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

Study of Charge Distributions and Electrical Properties in GaAs/AlGaAs Single Quantum Well/Nanowire Heterostructures

Dynamic Visualization of Axial P-N Junctions in Single Gallium Nitride Nanorods under Electrical Bias.

Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography

Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires

Non-Contact Electrical Detection of Intrinsic Local Charge and Internal Electric Field at Nanointerfaces

Electrical control of excitons in GaN/(Al,Ga)N quantum wells

Study of the Polarization Effect in InAs Quantum Dots/GaAs Nanowires

Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires

Simulation of Space Charge Effect in Field Emission from a Nanowire

Spatial Variation of Electrical Properties in Lateral Epitaxially Overgrown Gan

Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

Towards Quantitative Mapping of the Charge Distribution along a Nanowire by In-Line Electron Holography.

Natural charge spatial separation and quantum confinement of ZnO/GaN core/shell nanowires

Precise Characterization of Self-Catalyzed III–V Nanowire Heterostructures Via Optical Second Harmonic Generation

Intrinsic and External Strains Modulated Electronic Properties of GaN/InN Core/shell Nanowires

Comparative study on electronic properties of GaN nanowires by external electric field