Abstract:Abstract We study the generation and transformation of intrinsic luminescent centers in 4H-polytype of silicon carbide via heavy ion implantation and subsequent annealing. Defects induced by the implantation of germanium (Ge) or tin (Sn) have been characterized by photoluminescence (PL) spectra recorded at cryogenic temperatures. We find three predominant but as-yet-unidentified PL signatures (labeled as DI 1–3 ) at the wavelength of 1002.8 nm (DI 1 ), 1004.7 nm (DI 2 ), and 1006.1 nm (DI 3 ) after high dose implantation (> 4 × 10 13 cm −2 ) and high temperature annealing (> 1700°C). The fact that the DI lines co-occur and are energetically close together suggest that they originate from the same defect. Regardless of the implanted ion (Ge or Sn), a sharp increase in their PL intensity is observed when the implantation damage becomes high (vacancy concentration > 10 22 cm −3 ), indicating that the lines stem from an intrinsic defect caused by the damage. By tracking the PL signals after stepwise annealing, we examine how the overall intrinsic defects behave in the temperature range of 500 – 1800°C; the silicon vacancies formed by the implantation transform into either divacancies or antisite-vacancy pairs with annealing at about 1000°C. These spectral signatures are strongly reduced at 1200°C where the so-called TS defects are maximized in luminescence. As a final stage, the DI defects, which are most likely formed of antisites and vacancies, emerge at 1700°C. Our results provide a knowledge on how to incorporate and manipulate the intrinsic luminescent centers in SiC with ion implantation and annealing, paving the way for fully integrated quantum technology employing SiC.

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Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

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Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

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Primary Photoluminescence In As-Neutron (Electron) -Irradiated N-Type 6h-Sic

Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6h Sic

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Photoluminescence Characterization of Beryllium-Implanted 6h–silicon Carbide

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Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

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Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

Comparative Study of Electroluminescence from Annealed Amorphous Sic Single Layer and Amorphous Si/Sic Multilayers