Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6h Sic

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Photoluminescence Study of Beryllium Implantation Induced Intrinsic Defects in 6H-Silicon Carbide

Evolution of secondary defects in arsenic implanted Si

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

Photoluminescence of Electron-and Neutron-Irradiated n-Type 6H-SiC

Enhanced Luminescence from Si Quantum Dots/sio2 Multilayers by Hydrogen Annealing

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Defects in Ge-doped Cz-Si Annealed under High Stress

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Retention And Thermal Release Behavior Of Deuterium And Helium Implanted In Sic

Primary Photoluminescence In As-Neutron (Electron) -Irradiated N-Type 6h-Sic

Structural and Luminescent Properties of Electron-Irradiated Silicon

Thermal behavior of iron in 6H-SiC: Influence of He-induced defects

The effects of post-irradiation isochronous annealing on defects evolution and hardening in Hastelloy N alloy

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

Effect of Thermal Pretreatment on Electron-Irradiation Induced Defects in Hydrogen-Grown Silicon

Low-Temperature Photoluminescence of Hydrogen Ion and Plasma Implanted Silicon and Porous Silicon