Sensitive and Accurate Measurement of Interstitial Oxygen and Substitutional Carbon in Single Crystalline Silicon by Multiple Transmission-Reflection Infrared Spectroscopy (MTR-IR)

Lu Xiao-Bin,Xiao Shou-Jun
DOI: https://doi.org/10.11862/CJIC.2016.044
2016-01-01
Chinese journal of inorganic chemistry
Abstract:A new infrared spectroscopic measurement of interstitial oxygen and substitutional carbon in silicon wafers at room temperature by Multiple Transmission-Reflection Infrared Spectroscopy (MTR-IR) has been established. The superiority of MTR-IR to conventional IR has been analyzed first in principle by theoretical calculation and then verified by practical measurements of single crystalline silicon samples. The advantages of MTR-IR over conventional IR with a single normal incidence are: (1) The absorption bands of interstitial oxygen at 1 107 cm(-1) and substitutional carbon at 605 cm(-1) can be enhanced linearly with the simplified transmission times (N) between 6 and 12, which consequently extends the detection limit of oxygen and carbon at least one order of magnitude lower. (2) The strength of interference fringes can be decreased for a 0.2 mm thin silicon slice by 23 times as that from the single normal incidence and 11 times as that from the Brewster angle transmission respectively. (3) Not like the conventional IR method, only collecting data from one sampling point at each measurement, MTR-IR collects data from multiple sampling points in a longer sample for one measurement. Overall, both theoretical calculations and experimental results demonstrate the high sensitivity, reliability, and reproducibility of the MTR-IR spectroscopy on the measurement of impurities of interstitial oxygen and substitutional carbon of single crystalline silicon.
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