Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Measurement of the Effective Refractive Index of Silicon-on-Insulator Waveguide Using Mach–Zehnder Interferometers

Measurement of the Group Refractive Index of Bulk Material Using White-Light Spectral Interferometry

Measurements of the Effective Refractive Index of Bent Waveguide Based on Micro-Ring Resonators

Temperature sensor with enhanced sensitivity based on silicon Mach-Zehnder interferometer with waveguide group index engineering.

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Modeling and analysis of p-i-n diodes for Si based waveguide devices

Simultaneous Measurement of Refractive Index and Temperature Using a Mach-Zehnder Interferometer with Forward Core-Cladding-core Recoupling

Low-Coherence Method for Mode Analysis of a Silicon-Based Two-Mode Waveguide

Ratiometric Wavelength Monitor Based on Mach-Zehnder Interferometer over a 80 nm Wavelength Range

Study of Silicon-on-glass Waveguides

Temperature-insensitive Waveguide Sensor Using a Ring Cascaded with a Mach-Zehnder Interferometer

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Long-wave infrared 1 × 2 MMI based on air-gap beneath silicon rib waveguides.

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Analysis and Design of Refractive Index Biosensors Based on Single Silicon Nanobeam Cavity

Measurement of the Kerr nonlinear refractive index and its variation among 4H-SiC wafers

Strip-loaded Mach–Zehnder interferometer for absolute refractive index sensing

Femtosecond laser-inscribed fiber interface Mach–Zehnder interferometer for temperature-insensitive refractive index measurement