Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Measurements of the Effective Refractive Index of Bent Waveguide Based on Micro-Ring Resonators

Measurement of the Effective Refractive Index of Silicon-on-Insulator Waveguide Using Mach–Zehnder Interferometers

Calculate and analysis curved optical waveguide with FDTD

Design Of Sin Waveguide Reference Wave Source For Point Diffraction Interferometer

An Effective Index Method for an Optical Waveguide with an Arbitrary Refractive Index Distribution

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Measurement of Birefringence in Integrated Optical Waveguides by Use of A Microwave-Modulated Optical Wave

Analysis of deep-etched, single-mode GaAs/GaAlAs optical rib waveguides using discrete spectral index method

Experimental Investigation of Waveguide Sensor Based on Cascaded-Microring Resonators with Vernier Effect

Measurement of the intermodal crosstalk of a bent multimode waveguide.

Optimal Design of Ring Resonator in Silica Optical Waveguide

Concentric Silicon Micro-Ring Resonators with Enhanced Transmission Notch Depth

Structural Optimizations of SOI-based Single-Mode Rib Waveguide Bends

A New Method for Measuring Cut-Off Wavelengths of Waveguides with Arbitrary Cross Sections

Analysis and Design of Refractive Index Sensor Based on Waveguide Coupling

Optical waveguide propagation loss measurement using multiple reflections method

Inverse Design of Nanostructured Waveguide Bends with Ultra-small Radii

New Method for the Recovery of the Refractive-Index Profile of an Optical Waveguide from the Measured Coupling Angles

SOI Waveguides Fabricated by Wet-Etching Method

Mid-infrared Suspended Membrane Waveguide and Ring Resonator on Silicon-on-Insulator

Fiber-Optic Refractive Index Sensor via Macro-Bending Tapered Waveguide