Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Optical waveguide propagation loss measurement using multiple reflections method

Optical loss measurements in femtosecond laser written waveguides in glass

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Comparison of Fiber-to-Waveguide Couplers in Point Diffraction Interferometer Based on Waveguide Reference Wavefront Source

Design Of Sin Waveguide Reference Wave Source For Point Diffraction Interferometer

Impact of Lateral Leakage Loss in a Kind of Shallowly-etched Rib Waveguides on SOI with Non-rectangular Cross-section

Measurements of excess loss of the crossed waveguide using optical waveguide ring resonators

Measurement of the Effective Refractive Index of Silicon-on-Insulator Waveguide Using Mach–Zehnder Interferometers

Measurement of the Reflection and Loss of the Hybrid Air-Core Photonic-Bandgap Fiber Ring Resonator

Study of Silicon-on-glass Waveguides

Analysis of deep-etched, single-mode GaAs/GaAlAs optical rib waveguides using discrete spectral index method

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

High-precision measurement of a propagation loss of low-loss single-mode optical waveguides on lithium niobate on insulator

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Low Propagation Loss Ge-on-Si Waveguides and Their Dependency on Processing Methods

High-precision measurement of a propagation loss of single-mode optical waveguides on lithium niobate on insulator

Long-wave infrared 1 × 2 MMI based on air-gap beneath silicon rib waveguides.

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Simultaneous measurement of various optical parameters in a multilayer optical waveguide by a Michelson precision reflectometer.

Measurements of the Effective Refractive Index of Bent Waveguide Based on Micro-Ring Resonators

Improvement in Measurement of Transmission Loss of Organic Polymer Waveguide