Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Design Of Sin Waveguide Reference Wave Source For Point Diffraction Interferometer

Reference Wave Source Based on Silicon Nitride Waveguide in Point Diffraction Interferometer

Point Diffraction Interferometer Based on a Silicon Nitride Waveguide Spherical Wave Source

Comparison of Fiber-to-Waveguide Couplers in Point Diffraction Interferometer Based on Waveguide Reference Wavefront Source

Characterization of the Pinhole Diffraction Based on the Waveguide Effect in a Point Diffraction Interferometer

Single-shot reflective shearing point diffraction interferometer for wavefront measurements.

Comprehensive Design and Calibration of an Even Aspheric Quarter-Wave Plate for Polarization Point Diffraction Interferometry.

Polarization Point Diffraction Interferometry Based on an Even Aspheric Quarter-Wave Plate

Wavefront Analysis Method of Pinhole Point-Diffraction Based on Waveguide Theory

Design of a Beam-coupling System for a Chip-integrated Spectrometer with a Discrete Linear Waveguide

Modeling and analysis of p-i-n diodes for Si based waveguide devices

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Design and Optimization of A Silica Waveguide Based Visible Etched Diffraction Grating with Uniform Loss

Recent Developments of Interferometric Wavefront Sensing

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Dispersion Optimization of Silicon Nitride Waveguides for Efficient Four-Wave Mixing

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Design and Optimization of Diamond Mid-Infrared Phase Shifter

Design and Analysis of Orthogonal Polarization Point Diffraction Pinhole Plate