Abstract:The unique material property of silicon carbide (SiC) and the recent demonstration of low-loss SiC-on-insulator integrated photonics platform have attracted considerable research interests for chip-scale photonic and quantum applications. Here, we carry out a thorough investigation of the Kerr nonlinearity among 4H-SiC wafers from several major wafer manufacturers, and reveal for the first time that their Kerr nonlinear refractive index can be significantly different. By eliminating various measurement errors in the four-wave mixing experiment and improving the theoretical modeling for high-index-contrast waveguides, the best Kerr nonlinear refractive index of 4H-SiC wafers is estimated to be approximately four times of that of stoichiometric silicon nitride in the telecommunication band. In addition, experimental evidence is developed that the Kerr nonlinearity in 4H-SiC wafers can be stronger along the c-axis than that in the orthogonal direction, a feature that was never reported before.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to measure and compare the Kerr nonlinear refractive index and its variation among 4H - SiC (silicon carbide) wafers from different manufacturers. Specifically, the research aims to: 1. **Systematically measure and compare the Kerr nonlinear refractive index of 4H - SiC wafers from different manufacturers**: - Eliminate various measurement errors in four - wave mixing experiments and improve the theoretical modeling of high - contrast waveguides to ensure the accuracy of measurement. - Reveal that there are significant differences in the Kerr nonlinear refractive index among 4H - SiC wafers from different manufacturers. 2. **Explore the characteristics of Kerr nonlinearity in different directions**: - Discover that the Kerr nonlinearity of 4H - SiC wafers along the 𝑐 - axis direction is stronger than that in the orthogonal direction, a characteristic that has not been reported before. 3. **Verify and correct the model used for estimating the Kerr nonlinear refractive index in high - contrast waveguides**: - Propose and verify a new formula for the effective mode area to obtain more consistent results. ### Specific problems and solutions - **Elimination of measurement errors**: Reduce the uncertainty in the experiment by precisely calibrating the power and quality factor (𝑄 - value). - **Differences in wafers from different manufacturers**: For the first time, confirm that 4H - SiC wafers from different manufacturers have significantly different Kerr nonlinear refractive indices. For example, Cree wafers exhibit the highest 𝑛₂ value, while II - VI wafers exhibit the lowest 𝑛₂ value. - **Newly discovered direction - dependence**: Discover that the Kerr nonlinearity of Norstel 4H - SiC wafers along the 𝑐 - axis direction (TM mode) is stronger than that in the orthogonal direction (TE mode). - **Model correction**: Introduce a new formula for the effective mode area for estimating the Kerr nonlinear refractive index in high - contrast waveguides, thereby reducing the result differences caused by different waveguide geometries. ### Conclusion Through systematic experiments and theoretical analysis, the paper reveals significant differences in the Kerr nonlinear refractive index of 4H - SiC wafers and proposes more accurate measurement methods and model corrections, providing an important reference for the future development of SiC - based integrated photonics platforms. In particular, the research finds that the Kerr nonlinear refractive index of 4H - SiC can be four times that of stoichiometric silicon nitride, which is of great significance for classical and quantum nonlinear applications.

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