Abstract:The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{'}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^o C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{'}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^-$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^-$s. Above bandgap radiation is proposed to initially convert $V_{Si}^{0}$ to $V_{Si}^-$, but also may lead to diffusion of $V_{Si}^-$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions.

Investigation of the electro-optic effect in high-$Q$ 4H-SiC microresonators

Measurement of the Kerr nonlinear refractive index and its variation among 4H-SiC wafers

An Ultrahigh-Q Microresonator on 4H-silicon-carbide-on-insulator Platform for Multiple Harmonics, Cascaded Raman Lasing and Kerr Comb Generations

High- Q Photonic Crystal Cavity in a Single-Mode Silicon Ridge Waveguide

Photocurrent effect in reverse-biased p-n silicon waveguides in communication bands

Semi-insulating 4H-SiC lateral bulk acoustic wave resonators

Investigations of a coherently driven semiconductor optical cavity QED system

4H–SiC microring resonators—Opportunities for nonlinear integrated optics

Electro-Optic Effect Induced by Thermal Poling in Sio2 Ridge Waveguides

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Investigation Of Nano Sic Resonator

A study of thermally-induced optical bistability and the role of surface treatments in Si-based mid-infrared photonic crystal cavities

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices

Effects of Crystal Anisotropy on Optical Phonon Resonances in the Mid-Infrared Second Harmonic Response of SiC

Greater Than One Billion Q Factor for On-Chip Microresonators

Probing material absorption and optical nonlinearity of integrated photonic materials

Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavity

Experimental Investigation of Piezoresistive Effect in P-Type 4H–sic

A 3C-SiC-on-Insulator-Based Integrated Photonic Platform Using an Anodic Bonding Process with Glass Substrates

High-Q-factor nanobeam photonic crystal cavities in bulk silicon carbide