Abstract:Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity and stability. While the next generation of applications such as ultra-high speed optical transceivers, neuromorphic computing and terabit-scale communications demand further lower power consumption and higher operating frequency. Complementing the leading silicon-based material platforms, the third-generation semiconductor, silicon carbide (SiC), offers a significant opportunity toward the advanced development of PICs in terms of its broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, controllable artificial spin defects and complementary metal oxide semiconductor-compatible fabrication process. The superior properties of SiC have enabled a plethora of nano-photonic explorations, such as waveguides, micro-cavities, nonlinear frequency converters and optically-active spin defects. This remarkable progress has prompted the rapid development of advanced SiC PICs for both classical and quantum applications. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, multi-functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and highlighted. As a still-developing integrated photonic platform, prospects and challenges of utilizing SiC material platforms in the field of integrated photonics are also discussed.

Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

High-quality amorphous Silicon Carbide for hybrid photonic integration at low temperature

The Ohmic Contact of 4H-Sic Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature

Laser Annealing of SiO2 Film Deposited by ICPECVD for Fabrication of Silicon Based Low Loss Waveguide

Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

Chemical Mechanical Polishing of 4H-SiC Wafer with UV-LED Light

Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching

Foundry compatible, efficient wafer-scale manufacturing of ultra-low loss, high-density Si$_3$N$_4$ photonic integrated circuits

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Numerical Simulation and Experimental Investigation of ps Pulsed Laser Modification inside 4H-SiC Material

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

4H–SiC microring resonators—Opportunities for nonlinear integrated optics

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Silicon carbide for integrated photonics

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

The chip generation and removal mechanisms of thermal-assisted polishing monocrystalline 4 H-SiC

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate