Abstract:Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have shown low linear loss, negligible nonlinear loss, and high power handling over traditional silicon photonics. To achieve high-density photonic integration and high effective nonlinearity through tight optical confinement, thick stoichiometric Si$_3$N$_4$ films are indispensable. However, when using low-pressure chemical vapor deposition (LPCVD) to achieve high optical material transparency, Si$_3$N$_4$ films exhibit large tensile stress on the order of GPa. Methods for crack prevention are therefore essential. The photonic Damascene process has addressed this issue, attaining record low loss Si$_3$N$_4$ PICs, but it lacks control of the waveguide height. Conversely, precise waveguide dimension and ultra-low loss have been achieved with subtractive processing, but this method is not compatible with mass production due to the use of electron beam lithography. To date, an outstanding challenge is to attain both lithographic precision and ultra-low loss in high confinement Si$_3$N$_4$ PICs that are compatible with large-scale foundry manufacturing. Here, we present a single-step deposited, DUV-based subtractive method for producing wafer-scale ultra-low loss Si$_3$N$_4$ PICs that harmonize these necessities. By employing deep etching of densely distributed, interconnected trenches into the substrate, we effectively mitigate the tensile stress in the Si$_3$N$_4$ layer, enabling direct deposition of thick films without cracking and substantially prolonged storage duration. Lastly, we identify ultraviolet (UV) radiation-induced damage that can be remedied through rapid thermal annealing. Collectively, we develop ultra-low loss Si$_3$N$_4$ microresonators and 0.5 m-long spiral waveguides with losses down to 1.4 dB/m at 1550 nm with high production yield.

What problem does this paper attempt to address?

This paper is primarily dedicated to addressing several key challenges in the manufacturing of silicon nitride (Si₃N₄) photonic integrated circuits (PICs) to achieve large-scale production while maintaining high performance. Specifically, the paper addresses the following issues: 1. **High-Density Integration and Low Loss**: By using thick (e.g., greater than 600 nm for 1550 nm operating wavelength) stoichiometric silicon nitride films to achieve tight optical confinement and high effective nonlinearity. However, traditional low-pressure chemical vapor deposition (LPCVD) methods result in significant tensile stress in the films, leading to cracking. 2. **Manufacturing Process Limitations**: Although the Damascene process can solve the film cracking issue and achieve ultra-low loss silicon nitride photonic integrated circuits, it lacks precise control over waveguide height, which is crucial for manufacturing complex structures such as arrayed waveguide gratings. 3. **Compatibility with Mass Production**: While the subtractive process can provide precise waveguide dimension control and uniform thickness, it still faces the risk of wafer cracking and yield reduction when using high-stress, thick silicon nitride films to manufacture tightly confined optical waveguides. Additionally, although electron beam lithography (EBL) can achieve the lowest loss, this method is not conducive to large-scale production and limits the size expansion of large photonic circuits. 4. **Thermal Absorption Loss**: As the loss of photonic integrated circuits approaches the dB/m level, thermal absorption loss becomes one of the main factors affecting performance, especially when observing the "soliton step" phenomenon. The paper proposes a rapid thermal annealing (RTA) method to reduce thermal absorption loss caused by defect centers induced by UV exposure. In summary, the paper proposes a new single-step deposition subtractive process combined with deep ultraviolet (DUV) lithography to achieve wafer-scale ultra-low loss silicon nitride photonic integrated circuit manufacturing. This method not only improves manufacturing efficiency but also addresses previous issues in the manufacturing process, such as film stress-induced cracking, imprecise waveguide dimension control, and poor compatibility with mass production. Additionally, the rapid thermal annealing process reduces thermal absorption loss, further enhancing device performance. These improvements contribute to the large-scale production and application of compact, efficient, and cost-effective photonic systems.

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