Overcoming stress limitations in SiN nonlinear photonics via a bilayer waveguide

Karl J. McNulty,Shriddha Chaitanya,Swarnava Sanyal,Andres Gil-Molina,Mateus Corato-Zanarella,Yoshitomo Okawachi,Alexander L. Gaeta,Michal Lipson

2024-09-13

Abstract:Silicon nitride (SiN) formed via low pressure chemical vapor deposition (LPCVD) is an ideal material platform for on-chip nonlinear photonics owing to its low propagation loss and competitive nonlinear index. Despite this, LPCVD SiN is restricted in its scalability due to the film stress when high thicknesses, required for nonlinear dispersion engineering, are deposited. This stress in turn leads to film cracking and makes integrating such films in silicon foundries challenging. To overcome this limitation, we propose a bilayer waveguide scheme comprised of a thin LPCVD SiN layer underneath a low-stress and low-index PECVD SiN layer. We show group velocity dispersion tuning at 1550nm without concern for filmcracking while enabling low loss resonators with intrinsic quality factors above 1 million. Finally, we demonstrate a locked, normal dispersion Kerr frequency comb with our bilayer waveguide resonators spanning 120nm in the c-band with an on-chip pump power of 350mW.

Optics,Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in silicon nitride (SiN) nonlinear photonics, the problem of film cracking in thick low - pressure chemical vapor deposition (LPCVD) SiN films due to high stress. Specifically:

1. **Film stress limitation**: When a relatively thick LPCVD SiN film (usually greater than 400 nm) is required to meet the group - velocity dispersion (GVD) requirements, these thick films will crack due to high stress, thereby reducing the yield of photonic devices and limiting their application in large - scale systems.

2. **Limitations of existing solutions**: Although there are some methods to relieve the stress problem, such as using stress - release grooves, thermal cycling techniques or chemical - mechanical polishing (CMP), these methods still have cracks or other defects and are usually only applicable to smaller - sized wafers. In addition, other types of SiN materials (such as sputtered SiN, PECVD SiN, etc.) can reduce stress, but they have not yet reached the level of LPCVD SiN in terms of optical loss and consistency.

To solve the above problems, the author proposes a double - layer waveguide structure, that is, depositing a low - stress, low - refractive - index PECVD SiN layer on a thin LPCVD SiN layer. This design can achieve the required group - velocity dispersion (GVD) characteristics without increasing stress, thereby supporting nonlinear optical processes, such as the generation of Kerr frequency combs.

### Key formulas

- Group Velocity Dispersion (GVD):
\[
\beta_2=\frac{d^2\beta}{d\omega^2}
\]
where \(\beta\) is the propagation constant and \(\omega\) is the angular frequency.

Through this double - layer waveguide design, the author has achieved the normal and anomalous GVD ranges within the C - band and demonstrated the generation of low - loss resonators and broadband Kerr frequency combs.