Abstract:Silicon photonics is now widely accepted as a key technology in a variety of systems. But owing to material limitations, now it is challenging to greatly improve the performance after decades of development. Here, we show a high-performance broadband photodetector with significantly enhanced sensitivity and responsivity operating over a wide wavelength range of light from near-ultraviolet to near-infrared at low power consumption. The specially designed textured top ceiling electrode works effectively as an antireflection layer to greatly improve the absorption of near-infrared light, thereby overcoming the absorption limitation of near-infrared light. Instead of the conventional p-n junction and p-intrinsic-n junction, we introduce a similar to 15 nm thick alumina insulator layer between a p-type Si substrate and n-type ZnO nanowire (NW) arrays, which significantly enhances the charge carrier separation and collection efficiency. The photosensing responsivity and sensitivity are found to be nearly 1 order of magnitude higher than that of a reference device of p-Si/n-ZnO NW arrays, significantly higher than the commercial silicon photodiodes as well. The light-induced charge carriers flow across the appropriate thickness of insulator layer via the quantum mechanical Fowler-Nordheim tunneling mechanism. By virtue of the piezo-phototronic effect, the charge density at the interfaces can be tuned to alter the energy bands and the potential barrier distance for tunneling. Additionally, along with the use of incident light of different wavelengths, the influence of the insulator layer on the transport of electrons and holes separately is further investigated. The demonstrated concepts and study would lead to sensitivity improvement, quality enhancement of data transfer, decrease of power consumption, and cost reduction of silicon photonics.

Photocurrent effect in reverse-biased p-n silicon waveguides in communication bands

Avalanche-Enhanced Photocurrents in Pin Silicon Waveguides at 1550 Nm Wavelength

Features Of The Piezo-Phototronic Effect On Optoelectronic Devices Based On Wurtzite Semiconductor Nanowires

Influence of Photocarriers to Silicon Optical Modulator Based on Reverse-Biased Pn Diode at 1550 Nm Wavelength

Modeling and analysis of p-i-n diodes for Si based waveguide devices

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Nonlinear-Optic Silicon-Nanowire Waveguides

Optical modulation and detection based on a PN junction embedded silicon waveguide

High-Bandwidth Zero-Biased Waveguide-Integrated p-n Homojunction Graphene Photodetectors on Silicon for a Wavelength Band of 1.55 m and Beyond

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Thermally Enhanced Responsivity in an All-Silicon Optical Power Monitor Based on Defect-Mediated Absorption

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

Photodetection in silicon beyond the band edge with surface states

Enhancing bulk defect-mediated absorption in silicon waveguides by doping compensation technique

Capacitively-Induced Free-Carrier Effects in Nanoscale Silicon Waveguides for Electro-Optic Modulation

Analysis of the Thermo-Optic Effect in Lateral-Carrier-injection SOI Ridge Waveguide Devices

A Wavelength-Insensitive All-Silicon In-Line Optical Power Monitor for Multimode Silicon Photonics

Enhanced Nonlinear Wavelength Conversion in Silicon Photonic Waveguides Beyond the Singlemode Regime

Enhanced Electro-Optical Effect in Silicon

Dramatically Enhanced Broadband Photodetection by Dual Inversion Layers and Fowler-Nordheim Tunneling

Bias dependence of sub-bandgap light detection for core-shell silicon nanowires