Enhanced Nonlinear Wavelength Conversion in Silicon Photonic Waveguides Beyond the Singlemode Regime

Mingfei Ding,Zejie Yu,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2021.w1c.3

2021-01-01

Abstract:Nonlinear light-matter interaction is demonstrated with ultralow-loss silicon-on-insulator photonic waveguides beyond the single-mode regime. Significant enhancement of nonlinear photonic effects is observed with a pump power of 15 dBm.

What problem does this paper attempt to address?

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Hao Hu,Leif K. Oxenlowe,Lars H. Frandsen

DOI: https://doi.org/10.1364/oe.27.023775

IF: 3.8

2019-01-01

Optics Express

Abstract:A silicon/silicon-rich nitride hybrid-core waveguide has been proposed and experimentally demonstrated for nonlinear applications to fill the gap between the pure silicon waveguide and the pure silicon nitride waveguide with respect to the nonlinear properties. The hybrid-core waveguide presented here leverages the advantages of the silicon and the silicon-rich nitride waveguide platforms, showing a large nonlinearity γ of 72 ± 5 W-1 m-1 for energy-efficient four-wave mixing wavelength conversion. At the same time, the drawbacks of the material platforms are dramatically mitigated, exhibiting a reduced two-photon absorption coefficient βTPA of 0.023 cm/GW resulting in an increased nonlinear figure-of-merit as large as 21.6. A four-wave-mixing conversion efficiency as large as -5.3 dB has been achieved with the promise to be larger than 0 dB. These findings are strong arguments supporting the silicon/silicon-rich nitride hybrid-core waveguide to be used for energy-efficient nonlinear photonic applications.
Power-Attenuated Optimization for Four-Wave Mixing-Based Wavelength Conversion in Silicon Nanowire Waveguides

S. M. Gao,Z. Q. Li,X. Z. Zhang

DOI: https://doi.org/10.1163/156939310791586142

2010-01-01

Journal of Electromagnetic Waves and Applications

Abstract:Four-wave mixing (FWM)-based wavelength conversion in silicon nanowire waveguides are numerically investigated by considering the power-attenuated phase-matched condition due to the linear loss and the nonlinear loss caused by two-photon absorption and free carrier absorption effects. The power-attenuated FWM is theoretically analyzed, and the influences of the linear and nonlinear losses on the wavelength conversion performance are evaluated. After analyzing the dependence of the conversion efficiency and bandwidth on the waveguide length and incident pump power, the global optimized solution is achieved by considering the conversion efficiency and bandwidth simultaneously. The optimization result is demonstrated to be tightly related to the linear and nonlinear losses in the silicon nanowire waveguides.
Strong Nonlinear Optics In On-Chip Coupled Lithium Niobate Microdisk Photonic Molecules

Min Wang,Ni Yao,Rongbo Wu,Zhiwei Fang,Shilong Lv,Jianhao Zhang,Jintian Lin,Wei Fang,Ya Cheng

DOI: https://doi.org/10.1088/1367-2630/ab97ea

2020-01-01

New Journal of Physics

Abstract:High-quality lithium niobate (LN) thin-film microresonators provide an ideal platform for on-chip nonlinear optical applications. The strict phase-matching condition should be satisfied for an efficient nonlinear optical process, which requires dispersion engineering with an LN microresonator. However, this is challenging in single microresonator, resulting from the fabrication error. Here, we demonstrate strong nonlinear effects in a photonic molecule (PM) structure composed of two strongly coupled lithium niobate microdisks. The size mismatch of the microdisks enables phase matching by employing coupling-induced frequency splitting to compensate for the material and geometric dispersion. With a continuous wave excitation, rich nonlinear optical phenomena including cascaded four-wave mixing and stimulated Raman scattering were observed around the second harmonic signal. Meanwhile, an ultra-high four-wave mixing absolute conversion efficiency of 14% as obtained when the second harmonic signal power is at microwatts level. The LN PM is of great potential for applications in nonlinear integrated photonics.
Nonlinear-Optic Silicon-Nanowire Waveguides

Hirohito Yamada,Masayuki Shirane,Tao Chu,Hiroyuki Yokoyama,Satomi Ishida,Yasuhiko Arakawa

DOI: https://doi.org/10.1143/JJAP.44.6541

2005-01-01

Abstract:Using a 4-mm-long compact silicon-nanowire waveguide, we demonstrated nonlinear-optic effects such as the spectral broadening of optical short pulses due to self-phase modulation and nonlinear transmittance due to two-photon absorption. At a 12W input power level, we observed a 1.5-pi nonlinear phase shift and a strong saturation of optical output power in a sample. We also estimated the third-order nonlinear coefficient 112 and the two-photon absorption coefficient beta, and compared them with those previously reported.
Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Zhihua Tu,Qiang Jin,Xibin Li,Shiming Gao

DOI: https://doi.org/10.1364/josab.35.001772

2018-01-01

Abstract:Mid-infrared (MIR) integrated waveguides with strong local field enhancement and relatively low loss have shown their potential in nonlinear optical applications. We present a novel highly nonlinear silicon hybrid waveguide by setting an insulator-metal-insulator structure with [2-[4-(dimethylamino)phenyl]-3-([4-(dimethylamino)phenyl]ethynyl)buta-1,3-diene-1,1,4,4-tetracarbonitrile] (DDMEBT) and silver materials into the silicon slot. The mode field is strongly confined in the DDMEBT layers via the surface plasmon polariton effect. Two rectangular silicon nanobridges are used to further confine the optical field and reduce the loss simultaneously. The waveguide dimensions are optimized to obtain a figure of merit as high as 0.55 at 2.1 mu m and a zero-dispersion wavelength of 2.06 mu m. In a 6.6-mm-long waveguide, a maximum four-wave mixing efficiency of -6.65 dB and a bandwidth of 512 nm (1.894-2.406 mu m) can be simultaneously obtained, pumped by a 2.104-mu m source with a power of only 500 mW. Our designed waveguide exhibits excellent overall performance for nonlinear optical applications such as all-optical signal processing in the MIR band. (C) 2018 Optical Society of America
Enhancement of Nonlinear Phase Shift for Format Conversion in Silicon Waveguides

Ping Zhou,Shiming Gao,Xibin Li,Kai Hu

DOI: https://doi.org/10.1117/12.2023248

2013-01-01

Abstract:Different modulation formats may be required in different optical communication networks. Format conversion from intensity format to phase format is necessary to ensure the functions between long-haul transmission networks and metropolitan area networks. Cross-phase modulation (XPM) in silicon waveguides provides a promising way to realize all-optical integrated format conversion since a nonlinear phase shift is induced to the probe by the incident signal power. An on-off keying (OOK) signal can be converted to differential phase-shift keying (DPSK) signal if nonlinear phase shift of π is achieved. We numerically investigate the nonlinear phase shift caused by XPM in silicon waveguides by considering the influences of the walk-off effect, group-velocity dispersion, and nonlinear losses including two-photon absorption (TPA) and free-carrier absorption (FCA). The nonlinear phase shift is tried to be enhanced through waveguide design and wavelength management. The walk-off effect can be minimized by carefully choosing the zero dispersion wavelength of the used silicon waveguide and setting the signal and probe wavelengths symmetrically. Low and flat dispersion is beneficial to acquiring a large nonlinear phase shift. TPA and FCA will greatly reduce the nonlinear phase shift obtained from XPM and they should be effectively suppressed in order to realize high-quality format conversion.
Linear and Nonlinear Characterization of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Leif K. Oxenløwe,Lars H. Frandsen

DOI: https://doi.org/10.1364/acpc.2016.ath3g.4

2016-01-01

Abstract:Silicon/silicon-rich nitride hybrid waveguides have been proposed and experimentally demonstrated. The waveguides were measured to have a linear loss of ~5.60 dB/cm and a nonlinear parameter of ~32.3 W <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> .
New-generation silicon photonics beyond the singlemode regime

Long Zhang,Shihan Hong,Yi Wang,Hao Yan,Yiwei Xie,Tangnan Chen,Ming Zhang,Zejie Yu,Yaocheng Shi,Liu Liu,Daoxin Dai

2021-01-01

Abstract: The singlemode condition is one of the most important design rules for optical waveguides in guided-wave optics. The reason following the singlemode condition is that higher-order modes might be excited and thus introduce some undesired mode-mismatching loss as well as inter-mode crosstalk when light propagates along an optical waveguide beyond the singlemode regime. As a result, multimode photonic waveguides are usually not allowed. In this paper, we propose the concept of silicon photonics beyond the singlemode regime, developed with low-loss and low-crosstalk light propagation in multimode photonic waveguides with broadened silicon cores. In particular, silicon photonic waveguides with a broadened core region have shown an ultra-low-loss of ~0.1 dB/cm for the fundamental mode even without any special fabrication process. A micro-racetrack resonator fabricated with standard 220-nm-SOI MPW-foundry processes shows a record intrinsic Q-factor as high as 1.02*107 for the first time, corresponding to ultra-low waveguide propagation loss of only 0.065 dB/cm. A high-performance microwave photonic filter on silicon is then realized with an ultra-narrow 3-dB bandwidth of 20.6 MHz as well as a tuning range of ~20 GHz for the first time. An on-chip 100-cm-long delayline is also demonstrated by using the present broadened SOI photonic waveguides with compact Euler-curve bends, the measured propagation loss is ~0.14 dB/cm. The proposed concept of silicon photonics beyond the singlemode regime helps solve the issue of high propagation loss and also significantly reduces the random phase errors of light due to the random variations of waveguide dimensions. In particularity it enables silicon photonic devices with enhanced performances, which paves the way for new-generation silicon photonics realizing the large-scale photonic integration.
Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Kuyken Bart,Liu Xiaoping,Osgood Richard M.,Baets Roel,Roelkens Gunther,Green William M.

DOI: https://doi.org/10.1557/opl.2012.1323

2012-01-01

Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.
Optical Signal Processing In Silicon Nano-Waveguides

Yikai Su,Qiang Li,Fangfei Liu,Ziyang Zhang,Min Qiu

DOI: https://doi.org/10.1109/OECCACOFT.2008.4610555

2008-01-01

Abstract:All-optical tunable delay, dense wavelength conversion, and non return-to-zero (NRZ) to alternate-mark-inversion (AMI) format conversion are experimentally demonstrated using silicon microrings with a 450 x 250 nm cross-section size.
Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Zhihua Tu,Daru Chen,Hao Hu,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.3390/app10228087

2020-01-01

Applied Sciences

Abstract:Optical communication using the 2 μm wavelength band is attracting growing attention for the sake of mitigating the information ‘capacity crunch’ on the way, where on-chip nonlinear waveguides can play vital roles. Here, silicon-rich nitride (SRN) ridge waveguides with different widths and rib heights are fabricated and measured. Linear characterizations show a loss of ~2 dB/cm of the SRN ridge waveguides and four-wave mixing (FWM) experiments with a continuous wave (CW) pump reveal a nonlinear refractive index of ~1.13 × 10−18 m2/W of the SRN material around the wavelength 1950 nm. With the extracted parameters, dimensions of the SRN ridge waveguides are optimally designed for improved nonlinear performances for the 2 μm band, i.e., a maximal nonlinear figure of merit (i.e., the ratio of nonlinearity to loss) of 0.0804 W−1 or a super-broad FWM bandwidth of 518 nm. Our results and design method open up new possibilities for achieving high-performance on-chip nonlinear waveguides for long-wavelength optical communications.
Ultra-Broadband Nonlinearity Enhancement Based on a Novel Graphene-Silicon Hybrid Waveguide: Structure Design and Theoretical Analysis.

Qiang Jin,Xibin Li,Junfan Chen,Shiming Gao

DOI: https://doi.org/10.1038/s41598-017-12554-6

IF: 4.6

2017-01-01

Scientific Reports

Abstract:A graphene-silicon hybrid waveguide with a dielectric spacer is proposed to enhance the nonlinear response in ultra-wide wavelength range by applying graphene's broadband highly nonlinear optical properties. The chemical potential of the graphene layer is tuned to satisfy the resonance condition and hence a low propagation loss is obtained. The dielectric spacer is used for avoiding additional free-carrier-absorption loss due to carrier interchange between the silicon core and the graphene layer. Aiming at the special waveguide structure with ultra-thin graphene layer, a full-vectorial theoretical model is developed to analyze its nonlinear properties. The waveguide dimensions are optimized in terms of the nonlinear parameter. The proposed hybrid waveguide exhibits high nonlinearity enhancement in an ultra-broad wavelength region covering near-infrared and mid-infrared bands. The conversion efficiency for a degenerate four-wave mixing process reaches -18.5 dB only with a pump power of 0.5 W and a waveguide length of tens of microns. In the wavelength range of 1.3-2.3 μm, the conversion efficiency can be kept stable by adopting suitable waveguide geometry and length. The corresponding 3-dB bandwidth can reach 40-110 nm for each fixed pump. The graphene-silicon hybrid waveguide has the potential to support chip-scale nonlinear applications in both near- and mid-infrared bands.
Wavelength conversion in a silicon mode-split micro-ring resonator with 1G data rate

Ziyang Zhang,Qiang Li,Fangfei Liu,Tong Ye,Yikai Su,Min Qiu

DOI: https://doi.org/10.1109/CLEO.2008.4551773

2008-01-01

Abstract:We experimentally demonstrate the wavelength conversion based on free carrier dispersion effect induced by non-linear absorption in a silicon micro-ring resonator. The pump and signal wavelengths are set by the split resonances spaced by 0.4 nm induced by deformation in the coupling region. The results of 500 Mbps and 1Gbps are presented.
Ultralow-Loss Silicon Photonics beyond the Singlemode Regime

Long Zhang,Shihan Hong,Yi Wang,Hao Yan,Yiwei Xie,Tangnan Chen,Ming Zhang,Zejie Yu,Yaocheng Shi,Liu Liu,Daoxin Dai

DOI: https://doi.org/10.1002/lpor.202100292

2022-01-01

Abstract:Silicon photonics beyond the singlemode regime is applied for enabling ultralow-loss waveguide propagation for the fundamental mode even without any special fabrication process. Here a micro-racetrack resonator is fabricated with a standard 220-nm-SOI (silicon-on-insulator) multiproject-wafer foundry and shows a record high intrinsic quality factor of 1.02x10(7), corresponding to an ultralow propagation loss of only 0.065 dB cm(-1), which is about 20 times less than that of regular 450-nm-wide waveguides on the same chip. A state-of-the-art microwave photonic filter on silicon is then realized with an ultranarrow 3-dB bandwidth of 20.6 MHz and a tuning range of approximate to 20 GHz for the first time. A 100-cm-long delayline employed the broadened waveguides is also demonstrated with compact 90 degrees Euler-curve bends, and the measured average propagation loss is about 0.14 dB cm(-1). The concept of silicon photonics beyond the singlemode regime helps solve the issue of high propagation loss significantly. In particular, it enables silicon photonic devices with enhanced performances, which paves the way for realizing large-scale silicon photonic integration. This concept can be extended further to any other material platforms, such as silicon nitride and lithium niobate. This also brings numerous new opportunities for various applications such as nonlinear photonics, large-scale photonic integration, quantum photonics, microwave photonics, etc.
Design of Silicon Photonic Wavelength Conversion Chip for Mode-division Multiplexing Signals

Baobao Chen,Junfan Chen,Yi Zhao,Shiming Gao

DOI: https://doi.org/10.1109/piers-fall48861.2019.9021375

2019-01-01

Abstract:A silicon photonic wavelength conversion chip is proposed and designed for mode-division multiplexing signals, where multiple signal modes are simultaneously converted using FWM effects. Asymmetric tapered directional couplers (ATDC) are used to generate the TE 11 modes from TE 01 modes of the pump and signal and the MDM signals are generated by combined the TE 11 and TE 01 modes. The wavelength conversion is performed in a highly nonlinear silicon waveguide, which is designed with high conversion efficiency and low inter-mode crosstalk. Simulation results show that the mode-channel crosstalk is about -27.5 dB and the excess loss is less than 3.2dB over a wavelength band of ~ 100nm in the ATDC. In a 741-nm-wide, 220-nm-high and 8.7-mm-long silicon waveguide, the conversion efficiency is -20.7 dB and the 3-dB conversion bandwidth is 70 nm.
Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Xin Cui,Weiwei Zhang,Samuel Serna,Xavier Le Roux,Carlos Alonso-Ramos,Delphine Marris-Morini,Laurent Vivien,Jian-Jun He,Eric Cassan

DOI: https://doi.org/10.1117/12.2305909

2018-01-01

Abstract:Multiply resonant silicon photonic devices based on three coupled nanobeam cavities are proposed engineer third order nonlinearities at wavelengths around lambda = 1.55 mu m. We show that varying the geometrical parameters allows a flexible tuning of linear properties of the system, especially the deviations between the cavity resonance wavelengths. Based on the linear regime results, the nonlinear properties of the system are studied using coupled mode expressions of the super-modes given by the Tight-Binding method for the calculation of the nonlinear integrals controlling the intensity of the third-order nonlinear effects of the photonic molecules. We geometrically control the self-phase modulation (SPM), the cross-phase modulation (XPM), and the degenerate four-wave mixing (DFWM) nonlinear coefficients of the three coupled nanobeam cavities and identify general trends for nonlinear applications such as optical switching and frequency conversion devices.
Nonreciprocal Light Propagation in a Silicon Photonic Circuit

Liang Feng,Maurice Ayache,Jingqing Huang,Ye-Long Xu,Ming-Hui Lu,Yan-Feng Chen,Yeshaiahu Fainman,Axel Scherer

DOI: https://doi.org/10.1126/science.1206038

IF: 56.9

2011-01-01

Science

Abstract:Optical communications and computing require on-chip nonreciprocal light propagation to isolate and stabilize different chip-scale optical components. We have designed and fabricated a metallic-silicon waveguide system in which the optical potential is modulated along the length of the waveguide such that nonreciprocal light propagation is obtained on a silicon photonic chip. Nonreciprocal light transport and one-way photonic mode conversion are demonstrated at the wavelength of 1.55 micrometers in both simulations and experiments. Our system is compatible with conventional complementary metal-oxide-semiconductor processing, providing a way to chip-scale optical isolators for optical communications and computing.
All-Optical Wavelength Converter For Pol-Mux Qpsk Signals Based On A Single Silicon Waveguide

Xianglian Feng,Zhihang Wu,Lingchen Huang,Xiaoyan Wang,Hongzhi Chen,Shiming Gao

DOI: https://doi.org/10.1364/cleo_at.2016.jw2a.115

2016-01-01

Abstract:All-optical wavelength conversion is experimentally demonstrated for 40 Gb/s Pol-MUX QPSK signal using four-wave mixing in a single silicon waveguide. The power penalties of dual polarizations are both <1.5 dB at the BER of 3x10(-3).
Single and Multiple All-Optical Wavelength Conversion for 16-QAM Signals in a Silicon Waveguide

Xiaoyan Wang,Lingchen Huang,Shiming Gao

DOI: https://doi.org/10.1364/oedi.2015.ow2a.5

2015-01-01

Abstract:All-optical single and multiple wavelength conversion for 16-quadrature amplitude modulation signals are experimentally demonstrated based on four-wave mixing in a silicon waveguide with low power penalty (<1 dB) at the forward error correction threshold.

Enhanced Nonlinear Wavelength Conversion in Silicon Photonic Waveguides Beyond the Singlemode Regime

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Power-Attenuated Optimization for Four-Wave Mixing-Based Wavelength Conversion in Silicon Nanowire Waveguides

Strong Nonlinear Optics In On-Chip Coupled Lithium Niobate Microdisk Photonic Molecules

Nonlinear-Optic Silicon-Nanowire Waveguides

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Enhancement of Nonlinear Phase Shift for Format Conversion in Silicon Waveguides

Linear and Nonlinear Characterization of Silicon/Silicon-Rich Nitride Hybrid Waveguides

New-generation silicon photonics beyond the singlemode regime

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Optical Signal Processing In Silicon Nano-Waveguides

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Ultra-Broadband Nonlinearity Enhancement Based on a Novel Graphene-Silicon Hybrid Waveguide: Structure Design and Theoretical Analysis.

Wavelength conversion in a silicon mode-split micro-ring resonator with 1G data rate

Ultralow-Loss Silicon Photonics beyond the Singlemode Regime

Design of Silicon Photonic Wavelength Conversion Chip for Mode-division Multiplexing Signals

Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Nonreciprocal Light Propagation in a Silicon Photonic Circuit

All-Optical Wavelength Converter For Pol-Mux Qpsk Signals Based On A Single Silicon Waveguide

Single and Multiple All-Optical Wavelength Conversion for 16-QAM Signals in a Silicon Waveguide