Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.

Nonreciprocal Light Propagation in a Silicon Photonic Circuit

Development of Silicon Photonic Devices for Optical Interconnects

Silicon Photonic Network-on-chip and Enabling Components

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Chip-scale Optical Interconnects and Optical Data Processing Using Silicon Photonic Devices

Demonstration of a Chip-based Nonlinear Optical Isolator

Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

Design of Silicon Photonic Wavelength Conversion Chip for Mode-division Multiplexing Signals

Geometry Dependent One-Way Propagation of Light in Integrated Silicon Photonic Waveguide

Comment on "nonreciprocal Light Propagation in a Silicon Photonic Circuit".

Enhanced Nonlinear Wavelength Conversion in Silicon Photonic Waveguides Beyond the Singlemode Regime

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Nonreciprocal Isolation and Wavelength Conversion via a Spatiotemporally Engineered Cascaded Cavity

Demonstration of A Chip-Based Optical Isolator with Parametric Amplification

Optical Isolation Can Occur in Linear and Passive Silicon Photonic Structures

On-chip optical diode based on silicon photonic crystal heterojunctions

Nonreciprocal Light Transmission Based On The Thermal Radiative Effect

Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

Mode Conversion and Coupling in Silicon-Based Nanometer Photonic Integrated Circuits

Optical Nonreciprocal Transmission In An Asymmetric Silicon Photonic Crystal Structure