Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Electrically driven acousto-optics and broadband non-reciprocity in silicon photonics

Wideband, Efficient AlScN-Si Acousto-Optic Modulator in a Commercially Available Silicon Photonics Process

Controlling phonons and photons at the wavelength-scale: silicon photonics meets silicon phononics

Guided-Acoustic Stimulated Brillouin Scattering in Silicon Nitride Photonic Circuits

Unveiling Efficient Acousto-Optic Modulation in Silicon Photonic Devices via Lithium Niobate Using Transfer Printing

Integrated waveguide-based acousto-optic modulation with near-unity conversion efficiency

Control of coherent information via on chip photonic-phononic emitter-receivers

Electro-optic transduction in silicon via GHz-frequency nanomechanics

On-chip Inter-modal Brillouin Scattering

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Surface acoustic waves Brillouin photonics on a silicon nitride chip

Surface acoustic waves for acousto-optic modulation in buried silicon nitride waveguides

Modulation of Brillouin optomechanical interactions via acoustoelectric phonon-electron coupling

Surface acoustic wave lasing in a silicon optomechanical cavity

Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Stimulated Brillouin scattering in a non-suspended ultra-low-loss thick-SOI platform

Bidirectional microwave-optical transduction based on integration of high-overtone bulk acoustic resonators and photonic circuits

Development of Silicon Photonic Devices for Optical Interconnects

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Vertical engineering for large stimulated Brillouin scattering in unreleased silicon-based waveguides

Intermodal strong coupling and wideband, low-loss isolation in silicon