Experimental Observation of Raman Assisted and Kerr Optical Frequency Comb in a 4H-Silicon-Carbide on Insulator Microresonator

DOI: https://doi.org/10.4028/p-p2s0sp

2024-08-24

Key Engineering Materials

Abstract:Publication date: 22 August 2024 Source: Key Engineering Materials Vol. 984 Author(s): Adnan Ali Afridi, Yao Qin Lu, Xia Dong Shi, Rui Xuan Wang, Jing Wei Li, Qing Li, Hai Yan Ou Kerr nonlinear microcavities have garnered significant interest owing to their rich dynamics of nonlinear optical phenomena and compatibility with on-chip photonic integration. Recently, silicon carbide has emerged as a compelling platform due to its unique optical properties. In this study, we demonstrate Raman-assisted and Kerr optical frequency generation in a 4H-silicon carbide-on-insulator microresonator. By pumping the transverse electric (TE00) mode within the device, we observe a stimulated Raman scattering (SRS) Stokes with the Raman shift at approximately 775 cm-1, achieved with an on-chip power of 350 mW. Furthermore, by red-tuning the TE00 pump wavelength, we have achieved the coexistence of Raman and Kerr frequency combs. Using another device on the same chip with light variation of the taper we can observe the Raman and Kerr frequency combs within a spectral bandwidth ranging from ∼ 1440 to 1960 nm. The inclusion of the Raman-assisted comb extends the comb's coverage into longer wavelength regimes, making it highly desirable for spectroscopy applications.