Abstract:Nonlinear silicon photonics has been an immense research subject in the past several years with promising prospects of delivering chip scale signal modulation, shaping and characterization tools. In particular, broadband parametric process has been considered for applications ranging from wideband light amplifiers to signal characterization and signal shaping tools. Although underlying nonlinear effect, Kerr phenomena, in silicon has generated promising result of wavelength conversion, the success of these devices have been challenged by the presence of nonlinear losses such as two photon absorption and the two photon generated free carrier absorption. Experimental demonstrations were limited to conversion efficiencies below -10dB. Here, we present the prospect of ultra wide discrete band conversion schemes and the prospect of parametric process at mid-infrared wavelengths where nonlinear losses are not present. In particular, we explore the parametric wavelength conversion scheme at mid-wave infrared wavelength (2 mu m similar to 6 mu m) by four-wave-fixing process in silicon waveguides with new cladding materials, such as sapphire, that can provide transparency up to 6 mu m and facilitate phase matching condition for discrete wavelength bands as far as 60THz away from each other. Design criteria include the optimization of mode overlap integrals and dispersion engineering for an ultra-wide band signals. The particular results of wavelength conversion between 2 mu m bands and 5 mu m bands, and between 1.8 mu m bands and >4 mu m bands will be presented. Prospects of frequency band conversion in generation of new infrared signals and low noise, room temperature detection of mid-infrared signals will also be discussed.

Impact of nonlinear effects in Si towards integrated microwave-photonic applications

Impact of Nonlinear Effects on the Silicon-Based Waveguides and Microring Resonators

Strong Nonlinear Optics In On-Chip Coupled Lithium Niobate Microdisk Photonic Molecules

Silicon-based Ultra-Wide Discrete Band Conversion

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Nonlinear Regulation on Silicon Photonic Chips Based on Sb2Se3 Thin Films

Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Enhancement of Nonlinear Phase Shift for Format Conversion in Silicon Waveguides

Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths.

Silicon-integrated nonlinear III-V photonics

Strong Nonlinear Coupling Due to Induced Photon Interaction on a Si_3N_4 Chip

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

AlGaAs-On-Insulator Nonlinear Photonics

Kerr Nonlinear Optical Signal Processing in Ultra-silicon-rich Nitride-based Devices

Effects of Nonlinear Loss in High-Q Si Ring Resonators for Narrow-Linewidth III-V/Si Heterogeneously Integrated Tunable Lasers.

A Theoretical Model for an Optical Diode Built with Nonlinear Silicon Microrings

Stimulated Raman Scattering in Nonlinear Silicon Nanophotonic Waveguides: Theory and Applications in Photonic Integrated Circuits

Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Measurement of the Kerr nonlinear refractive index and its variation among 4H-SiC wafers