Abstract:On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs. Yet, despite intensive research efforts, nonlinear integrated photonic platforms still feature propagation losses orders of magnitude higher than in standard optical fiber. The tight confinement and high index contrast of integrated waveguides make them highly susceptible to fabrication induced surface roughness. Therefore, microresonators with ultra-high Q factors are, to date, only attainable in polished bulk crystalline, or chemically etched silica based devices, that pose however challenges for full photonic integration. Here, we demonstrate the fabrication of silicon nitride ($\mathrm{Si_3N_4}$) waveguides with unprecedentedly smooth sidewalls and tight confinement with record low propagation losses. This is achieved by combining the photonic Damascene process with a novel reflow process, which reduces etching roughness, while sufficiently preserving dimensional accuracy. This leads to previously unattainable \emph{mean} microresonator Q factors larger than $5\times10^6$ for tightly confining waveguides with anomalous dispersion. Via systematic process step variation and two independent characterization techniques we differentiate the scattering and absorption loss contributions, and reveal metal impurity related absorption to be an important loss origin. Although such impurities are known to limit optical fibers, this is the first time they are identified, and play a tangible role, in absorption of integrated microresonators. Taken together, our work provides new insights in the origins of propagation losses in $\mathrm{Si_3N_4}$ waveguides and provides the technological basis for integrated nonlinear photonics in the ultra-high Q regime.

Effects of Nonlinear Loss in High-Q Si Ring Resonators for Narrow-Linewidth III-V/Si Heterogeneously Integrated Tunable Lasers.

Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

High-performance lasers for fully integrated silicon nitride photonics

The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator

Investigation of Q degradation in low-loss Si3N4 from heterogeneous laser integration

Impact of Nonlinear Effects on the Silicon-Based Waveguides and Microring Resonators

Ultrahigh-Q AlGaAs-on-insulator Microresonators for Integrated Nonlinear Photonics.

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Adjusting Third-Order Nonlinear Properties in Silicon Triply Resonant Nanobeam Cavities

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Silicon Micro-Cavities And Their System Applications

Compact Narrow-Linewidth Integrated Laser Based on Low-Loss Silicon Nitride Ring Resonator

Measurement of the Nonlinear Loss and Effective Free Carrier Lifetime in Silicon Microring Resonators

Linewidth Compression of a Widely Tunable Hybrid Laser Through High-Q Resonance Feedback

Coupling ideality of integrated planar high-Q microresonators

Impact of nonlinear effects in Si towards integrated microwave-photonic applications

Scalable single-microring hybrid III-V/Si lasers for emerging narrow-linewidth applications

4H–SiC microring resonators—Opportunities for nonlinear integrated optics

Strong Nonlinear Coupling in a Si_{3}N_{4} Ring Resonator.

Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides