Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.

Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Nonlinear-Optic Silicon-Nanowire Waveguides

Phase-Resolved Observations Of Optical Pulse Propagation In Chip-Scale Silicon Nanowires

Self-phase Modulation in Single CdTe Nanowires

Mid-infrared Pulse Dynamics in Si Nanophotonic Wires Near the Two-Photon Absorption Edge

Nonlinear-optical Phase Modification in Dispersion-Engineered Si Photonic Wires.

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Cross-correlation frequency-resolved optical gating and dynamics of temporal solitons in silicon nanowire waveguides.

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Power-Attenuated Optimization for Four-Wave Mixing-Based Wavelength Conversion in Silicon Nanowire Waveguides

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Nonlinear Silicon Nanophotonics for Mid-Infrared Applications

Si-wire Waveguide Nonlinear-Optic Device with Strong Optical Field Confinement

Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Enhanced Nonlinear Wavelength Conversion in Silicon Photonic Waveguides Beyond the Singlemode Regime

Mid-Infrared to Telecom-Band Supercontinuum Generation in Highly Nonlinear Silicon-On-Insulator Wire Waveguides

Silicon-based Ultra-Wide Discrete Band Conversion

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Supercontinuum Generation in Silicon Photonic Wires

Self-steepening of Ultrashort Pulses in Silicon Photonic Nanowires.

Engineering Nonlinearities In Nanoscale Optical Systems: Physics And Applications In Dispersion-Engineered Silicon Nanophotonic Wires