Mid-Infrared to Telecom-Band Supercontinuum Generation in Highly Nonlinear Silicon-On-Insulator Wire Waveguides

Bart Kuyken,Xiaoping Liu,Richard M. Osgood,Roel Baets,Gunther Roelkens,William M. J. Green
DOI: https://doi.org/10.1364/oe.19.020172
IF: 3.8
2011-01-01
Optics Express
Abstract:We demonstrate the generation of a supercontinuum in a 2 cm long silicon wire by pumping the wire with mid-infrared picosecond pulses in the anomalous dispersion regime. The supercontinuum extends from 1535 nm up to 2525 nm for a coupled peak power of 12.7 W. It is shown that the supercontinuum originates primarily from the amplification of background noise. A detailed analysis of the spectral components which are generated through phase-matched processes is applied to extract the group velocity dispersion and fourth-order dispersion coefficient of the silicon wire waveguide.
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