Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.

Dispersive wave emission and supercontinuum generation in a silicon wire waveguide pumped around the 1550 nm telecommunication wavelength

Supercontinuum Generation in Submicrometer Diameter Silica Fibers

Subwavelength-diameter Silica Wire for Light In-Coupling to Silicon-Based Waveguide

Mid-Infrared to Telecom-Band Supercontinuum Generation in Highly Nonlinear Silicon-On-Insulator Wire Waveguides

Generation of A Telecom-To-Mid-Infrared Spanning Supercontinuum Using Silicon-On-Insulator Wire Waveguides

Supercontinuum Generation in Silicon Photonic Wires

Broadband Mid-Infrared Supercontinuum Generation in Dispersion-Engineered As2S3-silica Nanospike Waveguides Pumped by 2.8 Μm Femtosecond Laser

Nonlinear Propagation and Supercontinuum Generation of a Femtosecond Pulse in Silicon Waveguide

Mid-IR Supercontinua in Dispersion-Engineered As2S3-silica Nanospike Waveguides Pumped by Fs Pulses at 2.8 M

Supercontinuum Generation in Dispersion Engineered 4H-Sic-on-insulator Waveguides at Telecom Wavelengths

Supercontinuum generation assisted by dispersive waves trapping in dispersion-managed integrated silicon waveguides

Supercontinuum generation in dispersion engineered highly doped silica glass waveguides

Silicon waveguide with four zero-dispersion wavelengths and its application in on-chip octave-spanning supercontinuum generation.

Dispersive wave control enabled by silicon metamaterial waveguides

Coherent, directional supercontinuum via cascaded dispersive wave generation

A Phase Coherent Octave Spanning Mid-Infrared Supercontinuum Generated in a Silicon Photonic Wire

Directional supercontinuum generation: the role of the soliton

Experimental Study and Numerical Analysis of Femtosecond Pulse Propagation and Supercontinuum Generation in Highly Nonlinear Photonic Crystal Fiber

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Supercontinuum generation in high-index doped silica photonic integrated circuits under diverse pumping settings

On-chip Two-Octave Supercontinuum Generation by Enhancing Self-Steepening of Optical Pulses