Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.

Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths.

Silicon-based Ultra-Wide Discrete Band Conversion

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Impact of Nonlinear Effects on the Silicon-Based Waveguides and Microring Resonators

Nonlinear Silicon Nanophotonics for Mid-Infrared Applications

Two-photon absorption and Kerr coefficients of silicon for 850–2200nm

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Phase-sensitive pump-probe measurement of the complex nonlinear susceptibility of silicon across the direct band edge

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Measurement of the Kerr nonlinear refractive index and its variation among 4H-SiC wafers

Nonlinear-Optic Silicon-Nanowire Waveguides

Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Adjusting Third-Order Nonlinear Properties in Silicon Triply Resonant Nanobeam Cavities

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Silicon-integrated nonlinear III-V photonics

Mid-infrared Integrated Photonics on Silicon: a Perspective

Impact of nonlinear effects in Si towards integrated microwave-photonic applications

2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

Strong third-order nonlinearity in amorphous silicon carbide waveguides

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm