Abstract:Nonlinear silicon photonics has been an immense research subject in the past several years with promising prospects of delivering chip scale signal modulation, shaping and characterization tools. In particular, broadband parametric process has been considered for applications ranging from wideband light amplifiers to signal characterization and signal shaping tools. Although underlying nonlinear effect, Kerr phenomena, in silicon has generated promising result of wavelength conversion, the success of these devices have been challenged by the presence of nonlinear losses such as two photon absorption and the two photon generated free carrier absorption. Experimental demonstrations were limited to conversion efficiencies below -10dB. Here, we present the prospect of ultra wide discrete band conversion schemes and the prospect of parametric process at mid-infrared wavelengths where nonlinear losses are not present. In particular, we explore the parametric wavelength conversion scheme at mid-wave infrared wavelength (2 mu m similar to 6 mu m) by four-wave-fixing process in silicon waveguides with new cladding materials, such as sapphire, that can provide transparency up to 6 mu m and facilitate phase matching condition for discrete wavelength bands as far as 60THz away from each other. Design criteria include the optimization of mode overlap integrals and dispersion engineering for an ultra-wide band signals. The particular results of wavelength conversion between 2 mu m bands and 5 mu m bands, and between 1.8 mu m bands and >4 mu m bands will be presented. Prospects of frequency band conversion in generation of new infrared signals and low noise, room temperature detection of mid-infrared signals will also be discussed.

Phase-sensitive pump-probe measurement of the complex nonlinear susceptibility of silicon across the direct band edge

Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths.

Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent

A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Silicon-based Ultra-Wide Discrete Band Conversion

Two-photon absorption and Kerr coefficients of silicon for 850–2200nm

Continuous Wave Spectroscopy Of Nonlinear Dynamics Of Si Nanocrystals In A Microdisk Resonator

Investigations of a coherently driven semiconductor optical cavity QED system

Time-resolved pump-probe system based on a nonlinear imaging technique with phase object.

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Examining the Transition from Multiphoton to Optical-Field Photoemission From Silicon Nanostructures

Photodetection in silicon beyond the band edge with surface states

Phase Nanoscopy with Correlated Frequency Combs

Ultrafast energy absorption and photoexcitation of bulk plasmon in crystalline silicon subjected to intense near-infrared ultrashort laser pulses

Measurement of the Kerr nonlinear refractive index and its variation among 4H-SiC wafers

Ultrafast modulation of guided-mode resonance in a nonlinear silicon nitride grating

Nonlinear photoconductivity in pump-probe spectroscopy. I. Optical coefficients

Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlinearities

Precise characterization of a silicon carbide waveguide fiber interface

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals