Two-photon absorption and Kerr coefficients of silicon for 850–2200nm

Alan D. Bristow,Nir Rotenberg,Henry M. van Driel

DOI: https://doi.org/10.1063/1.2737359

IF: 4

2007-05-07

Applied Physics Letters

Abstract:The degenerate two-photon absorption coefficient β and Kerr nonlinearity n2 are measured for bulk Si at 300K using 200fs pulses with carrier wavelength of 850

physics, applied

What problem does this paper attempt to address?

Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths.

Ting Wang,Nalla Venkatram,Jacek Gosciniak,Yuanjing Cui,Guodong Qian,Wei Ji,Dawn T H Tan

DOI: https://doi.org/10.1364/OE.21.032192

IF: 3.8

2013-01-01

Optics Express

Abstract:Silicon based nonlinear photonics has been extensively researched at telecom wavelengths in recent years. However, studies of Kerr nonlinearity in silicon at mid-infrared wavelengths still remain limited. Here, we report the wavelength dependency of third-order nonlinearity in the spectral range from 1.6 μm to 6 μm, as well as multi-photon absorption coefficients in the same range. The third-order nonlinear coefficient n2 was measured with a peak value of 1.65 × 10(−13) cm2/W at a wavelength of 2.1 μm followed by the decay of nonlinear refractive index n2 up to 2.6 μm. Our latest measurements extend the wavelength towards 6 μm, which show a sharp decrement of n2 beyond 2.1 μm and steadily retains above 3 μm. In addition, the analysis of three-photon absorption and four-photon absorption processes are simultaneously performed over the wavelength range from 2.3 μm to 4.4 μm. Furthermore, the effect of multi-photon absorption on nonlinear figure of merit in silicon is discussed in detail.
Phase-sensitive pump-probe measurement of the complex nonlinear susceptibility of silicon across the direct band edge

C. D. Cruz,J. C. Stephenson,J. K. Wahlstrand

2024-05-30

Abstract:Pump-probe supercontinuum (SC) spectral interferometry in reflection is used to measure time-dependent variations in the complex dielectric function ($n$, $k$) over the visible wavelength range in bulk silicon. Changes in $n$ ($\Delta n$) due to a near infrared pump pulse are derived from transient fluctuations in the reflected SC probe amplitude, as is measured in conventional pump-probe experiments. Additionally, modifications to $k$ ($\Delta k$) are derived from phase shifts in the reflected SC. The ultrafast response is attributed to two-photon absorption ($\Delta k$) and the optical Kerr effect ($\Delta n$), enabling measurement of effective two-photon ($\beta$) and Kerr ($n_2$) coefficients. The onset of strong two-photon absorption as the two-photon energy is tuned through the $E_1$ = 3.4 eV direct band edge of silicon is observed for the first time to our knowledge. These constitute the first measurements of the complex nonlinear response of a bulk medium from reflectivity alone. The technique allows straightforward spectroscopic measurements of the $\chi^{(3)}$ nonlinear response at the surface of absorbing materials.

Optics
Measurement of the Kerr nonlinear refractive index and its variation among 4H-SiC wafers

Jingwei Li,Ruixuan Wang,Lutong Cai,Qing Li

DOI: https://doi.org/10.48550/arXiv.2211.09220

2022-11-17

Abstract:The unique material property of silicon carbide (SiC) and the recent demonstration of low-loss SiC-on-insulator integrated photonics platform have attracted considerable research interests for chip-scale photonic and quantum applications. Here, we carry out a thorough investigation of the Kerr nonlinearity among 4H-SiC wafers from several major wafer manufacturers, and reveal for the first time that their Kerr nonlinear refractive index can be significantly different. By eliminating various measurement errors in the four-wave mixing experiment and improving the theoretical modeling for high-index-contrast waveguides, the best Kerr nonlinear refractive index of 4H-SiC wafers is estimated to be approximately four times of that of stoichiometric silicon nitride in the telecommunication band. In addition, experimental evidence is developed that the Kerr nonlinearity in 4H-SiC wafers can be stronger along the c-axis than that in the orthogonal direction, a feature that was never reported before.

Optics
Two-photon absorption in silicon using real density matrix approach

David Ziemkiewicz,David Knez,Evan P. Garcia,Sylwia Zielińska-Raczyńska,Gerard Czajkowski,Alessandro Salandrino,Sergey S. Kharintsev,Aleksei I. Noskov,Eric O. Potma,Dmitry A. Fishman

2024-05-14

Abstract:Two-photon absorption in indirect gap semiconductors is an frequently encountered, but not well-understood phenomenon. To address this, the Real Density Matrix Approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials, and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.

Optics
Two-photon absorption in silicon using the real density matrix approach

David Ziemkiewicz,David Knez,Evan P Garcia,Sylwia Zielińska-Raczyńska,Gerard Czajkowski,Alessandro Salandrino,Sergey S Kharintsev,Aleksei I Noskov,Eric O Potma,Dmitry A Fishman

DOI: https://doi.org/10.1063/5.0219329

2024-10-14

Abstract:Two-photon absorption in indirect gap semiconductors is a frequently encountered, but not well-understood phenomenon. To address this, the real-density matrix approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.
Electrooptical effects in silicon

R. Soref,B. Bennett

DOI: https://doi.org/10.1109/jqe.1987.1073206

IF: 2.5

1987-01-01

IEEE Journal of Quantum Electronics

Abstract:A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the1.0-2.0 \mum optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find\Delta n = 1.3 \times 10^{5}at\lambda = 1.07 \mum whenE = 10^{5}V/cm, while the Kerr effect gives\Delta n = 10^{-6}at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of\pm1.5 \times 10^{-3}at\lambda = 1.3 \mum.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Zhihua Tu,Taoce Yin,Lars H. Frandsen,Daru Chen,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.23919/ps.2019.8818068

2019-01-01

Abstract:A silicon-rich nitride (SRN) ridge waveguide is fabricated and measured to exhibit a low loss of ~2 dB/cm and a nonlinear parameter γ of 1.47 W -1 m -1 at a wavelength of 2 μm.
Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Xiaoping Liu,Jeffrey B. Driscoll,Jerry I. Dadap,Richard M. Osgood,Solomon Assefa,Yurii A. Vlasov,William M. J. Green

DOI: https://doi.org/10.1364/oe.19.007778

IF: 3.8

2011-01-01

Optics Express

Abstract:We report an experimental study of picosecond pulse propagation through a 4-mm-long Si nanophotonic wire with normal dispersion, at excitation wavelengths from 1775 to 2250 nm. This wavelength range crosses the mid-infrared two-photon absorption edge of Si at ~2200 nm. Significant reduction in nonlinear loss due to two-photon absorption is measured as excitation wavelengths approach 2200 nm. At high input power, self-phase modulation is clearly demonstrated by the development of power-dependant spectral fringes. Asymmetry and blue-shift in the appearance of the spectral fringes at 1775 nm versus 2200 nm is further shown to originate from a strong reduction in the intra-pulse density of two-photon absorption-generated free carriers and the associated free-carrier dispersion. Analysis of experimental data and comparison with numerical simulations illustrates that the two-photon absorption coefficient β(TPA) obtained here from nanophotonic wire measurements is in reasonable agreement with prior measurements of bulk silicon crystals, and that bulk Si values of the nonlinear refractive index n(2) can be confidently incorporated in the modeling of pulse propagation in deeply-scaled waveguide structures.
Silicon-based Ultra-Wide Discrete Band Conversion

Ozdal Boyraz,En-Kuang Tien,Shiming Gao

DOI: https://doi.org/10.1117/12.858124

2010-01-01

Abstract:Nonlinear silicon photonics has been an immense research subject in the past several years with promising prospects of delivering chip scale signal modulation, shaping and characterization tools. In particular, broadband parametric process has been considered for applications ranging from wideband light amplifiers to signal characterization and signal shaping tools. Although underlying nonlinear effect, Kerr phenomena, in silicon has generated promising result of wavelength conversion, the success of these devices have been challenged by the presence of nonlinear losses such as two photon absorption and the two photon generated free carrier absorption. Experimental demonstrations were limited to conversion efficiencies below -10dB. Here, we present the prospect of ultra wide discrete band conversion schemes and the prospect of parametric process at mid-infrared wavelengths where nonlinear losses are not present. In particular, we explore the parametric wavelength conversion scheme at mid-wave infrared wavelength (2 mu m similar to 6 mu m) by four-wave-fixing process in silicon waveguides with new cladding materials, such as sapphire, that can provide transparency up to 6 mu m and facilitate phase matching condition for discrete wavelength bands as far as 60THz away from each other. Design criteria include the optimization of mode overlap integrals and dispersion engineering for an ultra-wide band signals. The particular results of wavelength conversion between 2 mu m bands and 5 mu m bands, and between 1.8 mu m bands and >4 mu m bands will be presented. Prospects of frequency band conversion in generation of new infrared signals and low noise, room temperature detection of mid-infrared signals will also be discussed.
Optimization of measurement parameters in Doppler broadening spectroscopy

X PI,C BURROWS,P COLEMAN

DOI: https://doi.org/10.1016/S0169-4332(02)00127-7

IF: 6.7

2002-01-01

Applied Surface Science

Abstract:The choice of regions of interest (ROIs) in the annihilation gamma line spectrum, which define the S and W parameters commonly used in the study of vacancy-type defects in Si, has been optimized by simulations using theoretical Doppler-broadened spectra. The figure of merit used is the difference between the S(W) parameter and its value in bulk Si expressed as multiple of the standard deviation in S(W). The optimum ROIs depend on the crystalline orientation of the Si and the energy resolution of the gamma ray detector used. Experimental data on B+-implanted Si were found to be consistent with the simulation results, which can therefore be used reliably to guide further experimental work.
Kerr Nonlinear Optical Signal Processing in Ultra-silicon-rich Nitride-based Devices

D. T. H. Tan,K. J. A. Ooi,D. K. T. Ng,E. Sahin,J. W. Choi,P. Xing,G. F. R. Chen,B. U. Sohn,H. Gao

DOI: https://doi.org/10.1109/piers-spring46901.2019.9017693

2019-01-01

Abstract:Nonlinear photonics devices are designed and fabricated on bandgap engineered ultra-silicon-rich nitride (USRN). The USRN films are compositionally engineered to possess a bandgap of 2.1 eV to eliminate two-photon absorption at 1.55 μm while maintaining a large linear and nonlinear refractive index of 3.1 and 2.8 × 10 -13 cm 2 / W respectively. We present nanopho-tonic devices periodic in one and two dimensions that introduce an engineered group index profile. The devices are designed to possess a specific dispersion profile that enables slow-light behavior and augmented waveguide nonlinear parameters to be observed. Photonic crystal waveguides with flat band region engineered at the 1.55 μm region show a ×40 enhancement increase in the nonlinear parameter, providing an effective nonlinear parameter of 1.97 × 10 4 W -l /m. One-dimensional photonic crystals are designed with effective index modulation effected in the device cladding, and demonstrated to exhibit augmented anomalous dispersion on the band edge while maintaining high transmission. Consequently, the reduced dispersive length combined with the large intrinsic nonlinearity in the material enables time and spectrally resolved characterizations of soliton formation, temporal compression and soliton fission to be experimentally observed. This represents one of the first observations of Bragg solitons on a chip, with the largest soliton-effect pulse compression to date with a compression factor of × 4.
Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Zhihua Tu,Daru Chen,Hao Hu,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.3390/app10228087

2020-01-01

Applied Sciences

Abstract:Optical communication using the 2 μm wavelength band is attracting growing attention for the sake of mitigating the information ‘capacity crunch’ on the way, where on-chip nonlinear waveguides can play vital roles. Here, silicon-rich nitride (SRN) ridge waveguides with different widths and rib heights are fabricated and measured. Linear characterizations show a loss of ~2 dB/cm of the SRN ridge waveguides and four-wave mixing (FWM) experiments with a continuous wave (CW) pump reveal a nonlinear refractive index of ~1.13 × 10−18 m2/W of the SRN material around the wavelength 1950 nm. With the extracted parameters, dimensions of the SRN ridge waveguides are optimally designed for improved nonlinear performances for the 2 μm band, i.e., a maximal nonlinear figure of merit (i.e., the ratio of nonlinearity to loss) of 0.0804 W−1 or a super-broad FWM bandwidth of 518 nm. Our results and design method open up new possibilities for achieving high-performance on-chip nonlinear waveguides for long-wavelength optical communications.
Analysis of Kerr comb generation in silicon microresonators under the influence of two-photon absorption and free-carrier absorption

P. Trocha,J.Gärtner,P. Marin-Palomo,W. Freude,W. Reichel,C. Koos

DOI: https://doi.org/10.1103/PhysRevA.103.063515

2020-04-01

Abstract:Kerr frequency comb generation relies on dedicated waveguide platforms that are optimized towards ultralow loss while offering comparatively limited functionality restricted to passive building blocks. In contrast to that, the silicon-photonic platform offers a highly developed portfolio of high-performance devices, but is deemed to be inherently unsuited for Kerr comb generation at near-infrared (NIR) telecommunication wavelengths due to strong two-photon absorption (TPA) and subsequent free-carrier absorption (FCA). Here we present a theoretical investigation that quantifies the impact of TPA and FCA on Kerr comb formation and that is based on a modified version of the Lugiato-Lefever equation (LLE). We find that silicon microresonators may be used for Kerr comb generation in the NIR, provided that the dwell time of the TPA-generated free-carriers in the waveguide core is reduced by a reverse-biased p-i-njunction and that the pump parameters are chosen appropriately. We validate our analytical predictions with time integrations of the LLE, and we present a specific design of a silicon microresonator that may even support formation of dissipative Kerr soliton combs.

Optics,Pattern Formation and Solitons
Experimental Characterization of Ultrafast, Tunable and Broadband Optical Kerr Nonlinearity in Graphene

Siddharatha Thakur,Behrooz Semnani,Safieddin Safavi-Naeini,Amir Hamed Majedi

DOI: https://doi.org/10.1038/s41598-019-46710-x

2019-03-18

Abstract:In this study we systematically measure the near-infrared spectral dependence, the sub-picosecond temporal evolution and pulse-width dependence of the effective Kerr coefficient ($n_{2,eff}$) of graphene in hundreds of femtosecond regime. The spectral dependence measured using the Z-scan technique is corroborated by quantum theory to extract a $n_{2,eff} \propto \lambda^2$ dependence. The temporal evolution extracted using the time-resolved Z-scan measurement shows the nonlinear response peaking at zero delay time and relaxing on a time scale of carrier relaxation. Since the Kerr-type response originated from the optically induced carrier population difference, the time-scale of the evolution of the nonlinear response is apt. The $n_{2,eff}$ shows a dependence on the pulse-width attributed to the relative heating and cooling times of the carriers. This dependence is strong when the pulse-duration is on the same time-scale as the decay constant. Throughout our study the $n_{2,eff}$ remains positive.

Optics
Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent

Ahsan Ali,Chuanliang Wang,Jinyang Cai,Khadga Jung Karki

2023-10-25

Abstract:Wide bandgap semiconductors are widely used in photonic technologies due to their advantageous features, such as large optical bandgap, low losses, and fast operational speeds. Silicon carbide is a prototypical wide bandgap semiconductor with high optical nonlinearities, large electron transport, and a high breakdown threshold. Integration of silicon carbide in nonlinear photonics requires a systematic analysis of the multiphoton contribution to the device functionality. Here, multiphoton photocurrent in a silicon carbide photodetector is investigated using phase-modulated femtosecond pulses. Multiphoton absorption is quantified using a 1030 nm phase-modulated pulsed laser. Our measurements show that although the bandgap is less than the energy of three photons, only four-photon absorption has a significant contribution to the photocurrent. We interpret the four-photon absorption as a direct transition from the valance to the conduction band at the {\Gamma} point. More importantly, silicon carbide withstands higher excitation intensities compared to other wide bandgap semiconductors making it an ideal system for high-power nonlinear applications.

Optics,Applied Physics
Photodetection in silicon beyond the band edge with surface states

T. Baehr-Jones,M. Hochberg,A. Scherer

DOI: https://doi.org/10.1364/OE.16.001659

2007-12-04

Abstract:Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are the two main technological hurdles before silicon can become a comprehensive platform for integrated optics. We report on the generation of free carriers in unimplanted SOI ridge waveguides, which we attribute to surface state absorption. By electrically contacting the waveguides, a photodetector with a responsivity of 36 mA/W and quantum efficiency of 2.8% is demonstrated. The photoconductive effect is shown to have minimal falloff at speeds of up to 60 Mhz.

Optics
Non-degenerate Two Photon Absorption Spectra of Si Nanocrystallites

Toshiaki Iitaka,Toshikazu Ebisuzaki

DOI: https://doi.org/10.48550/arXiv.cond-mat/9903128

1999-03-08

Abstract:We propose an efficient linear-scaling time-dependent method for calculating nonlinear response function, and study the size effects in non-degenerate two photon absorption spectra of Si nanocrystallites by using semi-empirical pseudopotentials.

Materials Science,Mesoscale and Nanoscale Physics,Computational Physics
Continuous Wave Spectroscopy Of Nonlinear Dynamics Of Si Nanocrystals In A Microdisk Resonator

Min Xie,Alessandro Pitanti,Mher Zh Ghulinyan,Deren Yang,Georg Pucker,Lorenzo L. Pavesi

DOI: https://doi.org/10.1103/PhysRevB.84.245312

IF: 3.7

2011-01-01

Physical Review B

Abstract:We report on a study of the recombination dynamics of silicon nanocrystals (Si-ncs) embedded in a planar whispering-gallery mode resonator. Fundamental properties of exciton dynamics in Si-ncs, in particular their absorption cross-section and excited carrier-related losses, can be extracted from continuous-wave spectroscopy by analyzing the resonance linewidths at different excitation powers. Observation of nonlinear drifts of mode peak positions in the same experiment allows us to model the nonlinear refractive index of the nanocrystalline material. The theoretical results confirm that the observed sublinear blue and linear redshifts of resonance peak positions are induced by excited carrier effects and thermal heating at low and high pump powers, respectively. The extracted thermo-optic coefficient, k(T) = 1.46 x 10(-4) K(-1), and excited carrier refraction, k(EC) = -1.07 x 10(-23) cm(3), in Si-ncs, are of relevance since they may induce important modulation of the fine modal structure of an optically active cavity.
The Refractive Index of Silicon at Gamma Ray Energies

D. Habs,M.M Günther,M. Jentschel,W. Urban

DOI: https://doi.org/10.1103/PhysRevLett.108.184802

2012-03-09

Abstract:The index of refraction n(E_{\gamma})=1+\delta(E_{\gamma})+i\beta(E_{\gamma}) is split into a real part \delta and an absorptive part \beta. The absorptive part has the three well-known contributions to the cross section \sigma_{abs}: the photo effect, the Compton effect and the pair creation, but there is also the inelastic Delbrück scattering. Second-order elastic scattering cross sections \sigma_{sca} with Rayleigh scattering (virtual photo effect), virtual Compton effect and Delbrück scattering (virtual pair creation) can be calculated by integrals of the Kramers-Kronig dispersion relations from the cross section \sigma_{abs}. The real elastic scattering amplitudes are proportional to the refractive indices \delta_{photo}, \delta_{Compton} and \delta_{pair}. While for X-rays the negative \delta_{photo} dominates, we show for the first time experimentally and theoretically that the positive \delta_{pair} dominates for \gamma rays, opening a new era of \gamma optics applications, i.e. of nuclear photonics.

Atomic Physics,Optics
Temperature Dependence of the Radiative Recombination Coefficient of Intrinsic Crystalline Silicon

T Trupke,MA Green,P Wurfel,PP Altermatt,A Wang,J Zhao,R Corkish

DOI: https://doi.org/10.1063/1.1610231

IF: 2.877

2003-01-01

Journal of Applied Physics

Abstract:The radiative recombination coefficient B(T) of intrinsic crystalline silicon is determined as a function of temperature over the temperature range 77–300 K. We observe that B(T) decreases as a function of temperature and we compare our results to previously published contradictory data from the literature. The radiative recombination coefficient is calculated from the absorption coefficient for band-to-band transitions, which we determine at different temperatures from photoluminescence spectra measured on planar high resistivity float zone silicon wafers. Photoluminescence spectra could be detected over a large range of more than five orders of magnitude, which allowed us to determine extremely low values of the absorption coefficient in the spectral range where absorption processes are accompanied by the simultaneous absorption of up to four phonons.

Two-photon absorption and Kerr coefficients of silicon for 850–2200nm

Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths.

Phase-sensitive pump-probe measurement of the complex nonlinear susceptibility of silicon across the direct band edge

Measurement of the Kerr nonlinear refractive index and its variation among 4H-SiC wafers

Two-photon absorption in silicon using real density matrix approach

Two-photon absorption in silicon using the real density matrix approach

Electrooptical effects in silicon

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Silicon-based Ultra-Wide Discrete Band Conversion

Optimization of measurement parameters in Doppler broadening spectroscopy

Kerr Nonlinear Optical Signal Processing in Ultra-silicon-rich Nitride-based Devices

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Analysis of Kerr comb generation in silicon microresonators under the influence of two-photon absorption and free-carrier absorption

Experimental Characterization of Ultrafast, Tunable and Broadband Optical Kerr Nonlinearity in Graphene

Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent

Photodetection in silicon beyond the band edge with surface states

Non-degenerate Two Photon Absorption Spectra of Si Nanocrystallites

Continuous Wave Spectroscopy Of Nonlinear Dynamics Of Si Nanocrystals In A Microdisk Resonator

The Refractive Index of Silicon at Gamma Ray Energies

Temperature Dependence of the Radiative Recombination Coefficient of Intrinsic Crystalline Silicon