Measurement Of Thermal Conductivity Of Buried Oxides Of Silicon-On-Insulator Wafers Fabricated By Separation By Implantation Of Oxygen Technology

Ping He,Litian Liu,Lilin Tian,Zhijian Li
DOI: https://doi.org/10.1063/1.1506784
IF: 4
2002-01-01
Applied Physics Letters
Abstract:In this work, an improved method for measuring the thermal conductivity of buried oxides of a silicon-on-insulator (SOI) wafer is proposed which is simple and effective. Using this method, the thermal conductivity of thin buried oxides with different SOI wafer thicknesses fabricated by separation by implantation of oxygen (SIMOX) technology is measured. It is found that at least in the range of thickness not less than 55 nm, the classically defined thermal conductivity of the SIMOX oxide remains constant (i.e., no size effect is observed) and is equal to 1.06 W m(-1) K-1, which is smaller than the 1.4 W m(-1) K-1 normally used value in device engineering. The boundary thermal resistance between the Si/SiO2 interface for SIMOX technology is measured accurately here. The results show that this boundary resistance cannot be neglected in calculation of the thermal resistance of SOI devices especially in the case of thinner back oxide. (C) 2002 American Institute of Physics.
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