Abstract:Heat accumulation and self-heating have become key issues in microelectronics owing to the ever-decreasing size of components and the move toward three-dimensional structures. A significant challenge for solving these issues is thermally isolating materials, such as silicon dioxide (SiO2), which are commonly used in microelectronics. The silicon-on-insulator (SOI) structure is a great demonstrator of the limitations of SiO2 as the low thermal conductivity insulator prevents heat dissipation through the bottom of a device built on a SOI wafer. Replacing SiO2 with a more thermally conductive material could yield immediate results for improved heat dissipation of SOI structures. However, the introduction of alternate materials creates unknown interfaces, which can have a large impact on the overall thermal conductivity of the structure. In this work, we studied a direct bonded AlN-to-SOI wafer (AlN-SOI) by measuring the thermal conductivity of AlN and the thermal boundary conductance (TBC) of silicon (Si)/AlN and Si/SiO2/aluminum-oxygen-nitrogen (AlON)/AlN interfaces, the latter of which were formed during plasma-activated bonding. The results show that the AlN-SOI possesses superior thermal properties to those of a traditional SOI wafer, with the thermal conductivity of AlN measured at roughly 40 W m-1 K-1 and the TBC of both interfaces at roughly 100 MW m-2 K-1. These results show that AlN-SOI is a very promising structure for improving heat dissipation in future microelectronics.

Thermal Conductivity of High-Integrity Nanometer Buried Oxides by SIMOX

Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers

Measurement Of Thermal Conductivity Of Buried Oxides Of Silicon-On-Insulator Wafers Fabricated By Separation By Implantation Of Oxygen Technology

Electrothermal characterization of SOI FinFETs

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

Heat dissipation path of self-heating effect for SOI MOSFET considering BOX layer and TiN barrier layer

Investigation of self-heating effect in SOI-LDMOS by device simulation

Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique

Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

Investigation of Self-Heating Effect in SOI Tunnel Field-Effect Transistor

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Fabrication of Thick BOX SOI by Smart-cut Technology

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure

Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Investigation on boron diffusion effects in buried oxide of Si nanocrystals (Si NCs) embedded Silicon-on-Insulator

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

Enhancing and Mapping Thermal Boundary Conductance across Bonded Si/SiC Interface

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer