Abstract:SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2×2 thermal-optical switch were successfully designed and fabricated. Based on these, 4×4 and 8×8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.

Fabrication of Thick BOX SOI by Smart-cut Technology

SOI Wafer Achieved by Smart-Cut Process

Fabrication of High Quality Patterned Soi Materials by Optimized Low-Dose Simox

SO1 WAFER ACHIEVED BY §MART-CUT PROCESS

Novel SOI technology - H+ implantation, bonding and separation

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Thermal Conductivity of High-Integrity Nanometer Buried Oxides by SIMOX

Characterization of Ultrathin-Body Germanium-on-insulator (geoi) Structures and MOSFETs on Flipped Smart-Cut™ GeOI Substrates

One And Two-Dimensional Mmi Device With Strong Confinement Structure On Soi

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Study of full isolation SOI technology by highly selective and self-stopping formation of porous oxidized silicon

Ultra-thin-film silicon-on-insulator structure fabricated by using oxidizing porous silicon technology

Fabrication Of Integrated Waveguide Turning Mirror On Silicon-On-Insulator

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Fabrication and Characterization of High Speed SOI MOS Devices and Ring-Oscillators

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

Compact Integrated Waveguide Turning Mirror in SOI

Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers

A Novel Fabrication Method for Flexible SOI Substrate Based on Trench Refilling with Polydimethylsiloxane

Research Progresses of SOI Optical Waveguide Devices and Integrated Optical Switch Matrix

Fabrication Of Self-Aligned Drain And Source On Insulator Mosfet With Dielectric Pocket By Local Simox Technology