Abstract:Ultra-thin-film silicon-on-insulator (TFSOI) structure with 100nm thick and 100μm wide top Si islands has been fabricated by using full isolation by oxidizing porous silicon (FIOPS) technique. These structures are characterized by using XTEM, SRP, raman spectroscopy, α-step and electrical breakdown measurement. The results suggest that the TFSOI structures are of high quality and the top silicon/buried oxide interface is relatively planar and uniform. The shape of the silicon islands and the stress in the top silicon depend strongly on the condition of anodization. P-channel TFSOI/MOS transistors have been fabricated in 80 nm thick top silicon layer with good output characteristics.

Ultra-thin-film silicon-on-insulator structure fabricated by using oxidizing porous silicon technology