Abstract:In this article, a novel S-gate-assisted silicon-on-insulator n-channel metal–oxide–semiconductor field-effect transistor (SGA SOI n-MOSFET) structure is proposed in order to suppress the total ionizing dose (TID) effect. The new structure settles the radiation-induced leakage current by isolating both the source and drain from the shallow trench isolation (STI) oxides and introducing two auxiliary gates. This work simulates the TID irradiation of three SOI n-MOSFET devices by Sentaurus TCAD and verifies the anti-TID irradiation characteristics of the proposed SGA SOI n-MOSFET. After the novel SGA SOI n-MOSFET was irradiated with 500 krad(Si), the OFF-state leakage current is only marginally increased, the ON-state leakage current is almost unchanged, the threshold voltage drift is 9.423%, and the transconductance degradation is only 7.453%. The simulation results demonstrated the proposed SGA SOI n-MOSFET resisted TID radiation doses up to 500 krad(Si). Meanwhile, the SGA SOI n-MOSFET is much more compact and saves tremendous cost compared with the H-gate-assisted (HGA) SOI n-MOSFET during very large scale integration (VLSI) fabrication and mass production. Moreover, the SGA SOI n-MOSFET solves the disadvantages of the ring-gate-assisted (RGA) SOI n-MOSFET complex aspect ratio ${W}/{L}$ design. The SGA SOI n-MOSFET offers a better alternative for nonultrahigh radiation dose environments.

A Novel Radiation Tolerant SOI Isolation Structure

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

Simulation for a Novel Vertical SOI Configuration

Reliability enhancement in advanced MOSFETS using the U-shape STI structure for radiation appication

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

A Novel 3-D Frequency Selective Structure for Radiation Leakage Suppression in Sub-6G Highly Integrated Package

Study of full isolation SOI technology by highly selective and self-stopping formation of porous oxidized silicon

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures

Ultra-thin-film silicon-on-insulator structure fabricated by using oxidizing porous silicon technology

Localized Backside Etching Structure of SOI Substrates on Total Ionizing Dose Effect Hardening for RF Applications

Ultra-Thin-Film Silicon-On-Insulator Structure Using Oxidized Porous Silicon

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

A Cmos-Compatible Silicon Substrate Optimization Technique And Its Application In Radio Frequency Crosstalk Isolation

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

A Shielding Structure for Crosstalk Reduction in Silicon Interposer

Radiation of SOI MOSFET with Shallow Source

Eliminating the Floating-Body Effects in a Novel CMOS-compatible Thin-Soi LDMOS

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

A New Silicon-On-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect

Novel SOI technology - H+ implantation, bonding and separation