Abstract:In this article, a novel S-gate-assisted silicon-on-insulator n-channel metal–oxide–semiconductor field-effect transistor (SGA SOI n-MOSFET) structure is proposed in order to suppress the total ionizing dose (TID) effect. The new structure settles the radiation-induced leakage current by isolating both the source and drain from the shallow trench isolation (STI) oxides and introducing two auxiliary gates. This work simulates the TID irradiation of three SOI n-MOSFET devices by Sentaurus TCAD and verifies the anti-TID irradiation characteristics of the proposed SGA SOI n-MOSFET. After the novel SGA SOI n-MOSFET was irradiated with 500 krad(Si), the OFF-state leakage current is only marginally increased, the ON-state leakage current is almost unchanged, the threshold voltage drift is 9.423%, and the transconductance degradation is only 7.453%. The simulation results demonstrated the proposed SGA SOI n-MOSFET resisted TID radiation doses up to 500 krad(Si). Meanwhile, the SGA SOI n-MOSFET is much more compact and saves tremendous cost compared with the H-gate-assisted (HGA) SOI n-MOSFET during very large scale integration (VLSI) fabrication and mass production. Moreover, the SGA SOI n-MOSFET solves the disadvantages of the ring-gate-assisted (RGA) SOI n-MOSFET complex aspect ratio ${W}/{L}$ design. The SGA SOI n-MOSFET offers a better alternative for nonultrahigh radiation dose environments.

Localized Backside Etching Structure of SOI Substrates on Total Ionizing Dose Effect Hardening for RF Applications

The Impacts of Localized Backside Etching on Proton Radiation Response in SOI Passive Devices

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs

New Insight into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation

Enhanced Radiation Hardness in SOI MOSFET with Embedded Tunnel Diode Layer

An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure

Modeling and Measurement of A Novel Shielding Design in Silicon Interposer

A Shielding Structure for Crosstalk Reduction in Silicon Interposer

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs

TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS

Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA

The Total Dose Radiation Hardened Mosfet With Good High-Temperatue Performance