Abstract:The ultrawide band gap, high breakdown electric field, and large-area affordable substrates make β-Ga2O3 promising for applications of next-generation power electronics, while its thermal conductivity is at least 1 order of magnitude lower than other wide/ultrawide band gap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, proper thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline β-Ga2O3 thin films on high thermal conductivity SiC substrates by the ion-cutting technique and room-temperature surface-activated bonding technique. The thermal boundary conductance (TBC) of the β-Ga2O3-SiC interfaces and thermal conductivity of the β-Ga2O3 thin films were measured by time-domain thermoreflectance to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the β-Ga2O3-SiC TBC values are reasonably high and increase with decreasing interlayer thickness. The β-Ga2O3 thermal conductivity increases more than twice after annealing at 800 °C because of the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and provides a platform for β-Ga2O3-related semiconductor devices with excellent thermal dissipation.

Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers

Thermal Conductivity of High-Integrity Nanometer Buried Oxides by SIMOX

Measurement Of Thermal Conductivity Of Buried Oxides Of Silicon-On-Insulator Wafers Fabricated By Separation By Implantation Of Oxygen Technology

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Electrical Properties and Microstructure of Buried Oxide (box) of Simox Studied by Conducting Atomic Force Microscopy (C-Afm)

Characterization of Nano-Sized Si Islands in Buried Oxide Layer of Simox by Conducting Afm

Dose-Energy Match for the Formation of High-Integrity Buried Oxide Layers in Low-Dose Separation-By-Implantation-Of-Oxygen Materials

Effects of Buried Oxide Layer on Indium Diffusion in Separation by Implantation of Oxygen

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

Formation of Silicon on Plasma Synthesized SiOxNy and Reaction Mechanism

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Heat dissipation path of self-heating effect for SOI MOSFET considering BOX layer and TiN barrier layer

High-Temperature Thermoelectric Characterization of III – V Semiconductor Thin Films by Oxide Bonding

Synthesis of SOI Material Using Low Energy Water Ion Implantation

Characterization of ultrathin SiO2/Si interface grown by low temperature plasma oxidation

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces

TEM analysis of SIMOX materials

Energy Dependence of Low Dose SIMOX Wafers