Abstract:Monolayer (ML) Ga2O3 with outstanding properties is promising for advanced nanodevice applications; however, its high exfoliation energy makes obtaining it challenging. In this study, we propose a more efficient solution to obtain ML Ga2O3 by exfoliation from indium-doped bulk & beta;-Ga2O3. The exfoliation efficiency with the assistance of In-doping and the doping influence on the stability and structural and electronic properties of ML Ga2O3 are systematically studied using first-principles calculations. The exfoliation energy of ML Ga2O3 is found to be reduced by 28% and is of the same order of magnitude as that of typical van der Waals (vdWs) 2D materials. Besides, excellent stability is preserved for ML Ga2O3 at extremely high In doping concentration by phonon spectrum and ab initio molecular dynamics inspections. The bandgap of ML Ga2O3 decreases from 4.88 to 4.25 eV with increased In concentration, and the modification of the VBM converts ML Ga2O3 to a direct bandgap semiconductor. With the suppression of ZA mode phonon scattering, the pristine and In-doped ML Ga2O3 exhibit high electron mobility, whereas the strong electron-phonon coupling (EPC) effect significantly decreases the hole mobility. Finally, the transfer characteristics of 5 nm MOSFETs based on the pristine and In-doped ML Ga2O3 with varied In concentrations are simulated based on the non-equilibrium Green's function (NEGF) formalism. The I-on for HP has a maximum of 3060 & mu;A & mu;m(-1) at In doping concentration of 5% and is triple that of the pristine ML Ga2O3 for LP at In doping concentration of 20%. The FOMs of n-type MOSFETs based on the In-doped ML Ga2O3 and typical 2D materials are compared and shows huge potential for sub-5 nm applications. Our study applies a new strategy for obtaining ML Ga2O3 and can also improve the device performance at the same time.

Effects of Buried Oxide Layer on Indium Diffusion in Separation by Implantation of Oxygen

Implant Damage and Redistribution of Indium in Indium-Implanted Thin Silicon-on-insulator

Characterization of Nano-Sized Si Islands in Buried Oxide Layer of Simox by Conducting Afm

Dose-Energy Match for the Formation of High-Integrity Buried Oxide Layers in Low-Dose Separation-By-Implantation-Of-Oxygen Materials

Investigation on boron diffusion effects in buried oxide of Si nanocrystals (Si NCs) embedded Silicon-on-Insulator

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

In situ isotope study of indium diffusion in InP/Al 2 O 3 stacks

Si-incorporated amorphous indium oxide thin-film transistors

Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Effect of Implantation Energy on the Microstructure Evolution of Low Dose Separation of Implanted Oxygen Wafers

Electrical Properties and Microstructure of Buried Oxide (box) of Simox Studied by Conducting Atomic Force Microscopy (C-Afm)

Computer Simulation for the Formation of the Insulator Layer of Silicon-On-Insulator Devices by N+ and O+ Co-Implantation

Low Frequency Noise and Radiation Response in the Partially Depleted SOI MOSFETs with Ion Implanted Buried Oxide

Auger-Electron and Ir Spectroscopic Studies of Soi Structure Formed by Oxygen and Nitrogen Implantation

Influence of implantation conditions on quality of SIMOX materials

Formation of Silicon on Insulator Using Separation by Implantation of Oxygen with Water Plasma

AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION

TEM analysis of SIMOX materials

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET