Abstract:Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices.

Behavior of Residual Oxygen in Top Si Layer of SIMOX Studied by PL and SIMS

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

TEM analysis of SIMOX materials

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

In-situ diagnosis during preparation of SiO_x thin films by mass spectroscopy and their characteristics

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

SIMS Investigation of Oxygen in 3C-Sic on Si

Influence of implantation conditions on quality of SIMOX materials

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Energy Dependence of Low Dose SIMOX Wafers

The energy position of electrically active centers in the oxide layer of SIMOX structures

Study of Low Dose SIMOX Wafer

Effects of different fabrication processes on stress of SIMOX structure

Growth of Epitaxial CoSi2 on SIMOX Material by a Solid-Phase Reaction of Deposited TiN/Co/Ti Layers

Intermediate Phase Silicon Structure Induced Enhancement of Photoluminescence from Thermal Annealed A-Si/Sio2 Multilayers

Effects of Buried Oxide Layer on Indium Diffusion in Separation by Implantation of Oxygen

Electrical Properties and Microstructure of Buried Oxide (box) of Simox Studied by Conducting Atomic Force Microscopy (C-Afm)

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior