Abstract:Low-plasma and high-temperature chemical vapor deposition of Si-rich SiO(x) for concurrently enhancing the carrier tunneling and light emission efficiency is investigated. The O/Si composition ratio of the SiO(x) film significantly decreases from 2 to 1.2 as the substrate temperature increases from 200 to 400 °C, corresponding to the enhanced precipitation of Si nanocrystals in the Si-rich SiO(x). In comparison with stoichiometric SiO(2), the Si-L(2,3) transition induced kinetic energy loss of the primary electron transmitted through the Si-rich SiO(x) sample grown at 400 °C is red-shifted by 5 eV. The strongest Si nanocrystal related photoluminescence (PL) can be obtained from the Si-rich SiO(x) film prepared at a threshold plasma power of 30 W and substrate temperature of 400 °C. In low-plasma and high-temperature deposited samples, the threshold Fowler-Nordheim (F-N) tunneling field and the indium tin oxide (ITO)-SiO(x) junction potential barrier height of ITO/SiO(x) /p-Si/Al metal-oxide-semiconductor light emitting diodes (MOSLEDs) are concurrently reduced due to the increasing density of Si nanocrystals precipitated within the SiO(x) matrix. A thermal activation energy of 0.8 eV was observed for initiating the F-N tunneling process in the MOSLEDs. The electroluminescence (EL) intensity and efficiency of the MOSLEDs are improved by at least 10 dB due to the oxygen deficient plasma enhanced chemical vapor deposition (PECVD) of Si-rich SiO(x) at low plasma power and high temperatures.

Photoluminescence and Electroluminescence from Scored Si-Rich SiO2 Film／p-Si Structure

Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

Luminescence in Si/SiO2/Si structure formed by oxygen implantation

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2

Photoluminescence study of Si oxide films with different Si-rich degrees

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Modulation Effect of Microstructures in Silicon-Rich Oxide Matrix on Photoluminescence from Silicon Nanoclusters Prepared by Different Fabrication Techniques

The Influence of Microstructure on Optical Properties of Porous Silicon

Intermediate Phase Silicon Structure Induced Enhancement of Photoluminescence from Thermal Annealed A-Si/Sio2 Multilayers

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Low-plasma and high-temperature PECVD grown silicon-rich SiO(x) film with enhanced carrier tunneling and light emission

Luminescence from Si/SiO 2 with Si Implantation

Strong Ultraviolet Emission from Sio2/Linbo3-(: Fe)/Sio2 Structures

ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES

Photoluminescence and Structural Properties of Si Nanoparticles Embedded in Sio2 Matrix by Reactive Rf Magnetron Sputtering

Studies on microstructure and photoluminescence property of porous silicon

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering