Abstract:The diffusion of indium in both the top silicon and the buried oxide (BOX) layers in separation by implantation of oxygen (SIMOX) is investigated. For all indium-implanted samples, there is a significant redistribution of indium atoms from the top Si-BOX interface toward the bottom BOX-Si interface, thereby affecting the indium concentrations in the two silicon-BOX interfaces. In the case of relatively high-dose and high-energy indium implantation (1×1014cm−2 at 200keV), an anomalous segregation of indium is observed in both the bulk Si and the SIMOX substrates. However, there is a notable transportation of indium atoms from the top Si layer toward the bottom BOX-Si interface in the SIMOX, thereby affecting not only the indium concentrations in the two silicon-BOX interfaces but also the indium distribution in the top silicon layer. The unique indium-diffusion behavior in the SIMOX is believed to be a composite effect of indium trapping by the two Si-BOX interfaces, indium atoms being drawn away from the top silicon layer by the buried oxide, as well as implant damages in the top silicon. The asymmetrical structure of the BOX layer with Si islands accumulating at the bottom BOX-Si interface and the abundance of oxygen-related defects in the BOX layer are also believed to be responsible for the indium-diffusion behavior in the BOX layer.

TEM analysis of SIMOX materials

Influence of implantation conditions on quality of SIMOX materials

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

Study of Low Dose SIMOX Wafer

Energy Dependence of Low Dose SIMOX Wafers

TEM Analysis for Microstructure of SOI Material

Behavior of Residual Oxygen in Top Si Layer of SIMOX Studied by PL and SIMS

Effects of different fabrication processes on stress of SIMOX structure

Dose-Energy Match for the Formation of High-Integrity Buried Oxide Layers in Low-Dose Separation-By-Implantation-Of-Oxygen Materials

XTEM and IR Absorption Analysis of Silicon Carbide Prepared by High Temperature Carbon Implantation in Silicon

Fabrication of High Quality Patterned Soi Materials by Optimized Low-Dose Simox

The Total Dose Radiation Characteristics Of Short-Channel Cmos/Simox Devices

The Total Dose Radiation Characteristics of Short Channel CMOS/SIMOX Devices

Electrical Properties and Microstructure of Buried Oxide (box) of Simox Studied by Conducting Atomic Force Microscopy (C-Afm)

Optical Characterization of Doped Top Layers in SOI Structures Formed by Ion Implantation

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process

Growth of Epitaxial CoSi2 on SIMOX Material by a Solid-Phase Reaction of Deposited TiN/Co/Ti Layers

Measurement Of Thermal Conductivity Of Buried Oxides Of Silicon-On-Insulator Wafers Fabricated By Separation By Implantation Of Oxygen Technology

Effects of Buried Oxide Layer on Indium Diffusion in Separation by Implantation of Oxygen

Electrical Characterization of SIMOX SOI Wafers with MOSOS C-V Measurements