Abstract:The electrical performance of high-precision analog and digital circuits in MOSFETs is highly sensitive to temperature changes. Here, by studying the stability of electrical characteristics such as OFF-state leakage current, saturation current, and transconductance efficiency of fully depleted silicon-on-insulator (FDSOI) and partially depleted silicon-on-insulator (PDSOI) in the temperature range of 25 °C–300 °C, we proposed a new semiconductor-parameter-temperature-increment (SPTI) model. Within this SPTI model, it can clarify the influence of high-temperature electrical parameters, and , on the stability of the electrical characteristics of FDSOI and PDSOI. Thus, it helps in understanding the differences in the stability of electrical characteristics between the two devices. In addition, the SPTI model can also be used to obtain the design domain of the electrical characteristics for FDSOI and PDSOI. More importantly, a compromise method based on the design parameter can be obtained to effectively improve the electrical characteristics and the stability of the two devices.

TEM Analysis for Microstructure of SOI Material

TEM analysis of SIMOX materials

Electrothermal characterization of SOI FinFETs

Defects in SOI Materials and Related Characterization

Some Material Structural Properties of SOI Substrates Produced by SDB Technology

A TEM study of Si-SiO2 interfaces in silicon nanodevices

Novel SOI technology - H+ implantation, bonding and separation

The Analysis and Structural Design of Micro SOI Pressure Sensors.

Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique

Electrical Characterization of SIMOX SOI Wafers with MOSOS C-V Measurements

Measurement Of Thermal Conductivity Of Buried Oxides Of Silicon-On-Insulator Wafers Fabricated By Separation By Implantation Of Oxygen Technology

Study of Low Dose SIMOX Wafer

Research of Mechanism of Buried Oxide Layer Stress Impact on the Micro-cantilever Processing Breakage

Synthesis of SOI Material Using Low Energy Water Ion Implantation

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Influence of implantation conditions on quality of SIMOX materials

Analysis Of Self-Heating Effect In A Soi Ldmos Device Under An Esd Stress

Fabrication of High Quality Patterned Soi Materials by Optimized Low-Dose Simox

Dose-Energy Match for the Formation of High-Integrity Buried Oxide Layers in Low-Dose Separation-By-Implantation-Of-Oxygen Materials

High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match